Hostname: page-component-848d4c4894-xfwgj Total loading time: 0 Render date: 2024-07-02T06:20:23.430Z Has data issue: false hasContentIssue false
  • English
  • Français

Effect of Phosphorus-Doped Polysilicon Anneal on Thin Oxide Reliability as Probed with X-Ray Damage Characterization

Published online by Cambridge University Press:  22 February 2011

R. Nachman  and
F. Cerrina
R. Nachman
Affiliation:
Center for X-ray Lithography (CXrL) and Electrical and Computer Engineering Department, University of Wisconsin-Madison
F. Cerrina
Affiliation:
Center for X-ray Lithography (CXrL) and Electrical and Computer Engineering Department, University of Wisconsin-Madison
Get access

Abstract

In this paper we address the degradation of oxide reliability after annealing the phosphorusdoped polysilicon of MOS structures. The oxide reliability was studied in terms of X-ray radiation sensitivity as well as breakdown characteristics.

We found that annealing the polysilicon increased the radiation sensitivity of the gate oxide. We believe that this increase is a result of the phosphorus out-diffusion from the polysilicon into the oxide and a result of the creation of phosphorus related traps in the oxide bulk. We also found that the oxide charge to breakdown (Qbd) degradation correlates well with the density of the phosphorus in the oxide.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 338: Symposium – Materials Reliability in Microelectronics IV , 1994 , 63
Copyright
Copyright © Materials Research Society 1994

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] McLean, F. B., Boesch, H.H. Jr, and Oldham, T. R., Chapter 3 of Ionizing Radiation Effects In MOS Devices and Circuits, Edited by Ma, T. P. and Dressendorfer, P. V., (Wiley-Interscience Publication), 1989.Google Scholar
[2] Hughes, R. C., Phys. Rev. Lett. 30, 1333 (1973).Google Scholar
[3] McLean, F. B., Boesch, H. E. Jr., and McGarrity, M., IEEE Trans. Nucl. Sci. NS–23, 1506 (1976).Google Scholar
[4] Sah, C. T. and Tremere, D. A., J. Phys. Chem. Solids, (Pergamon Press 1959), Vol.11, p. 288–298.Google Scholar
[5] Griscom, D. L., J. Appl. Phys. 58(7), 1 October 1985, p. 2524.Google Scholar
[6] Sethi, R. B. and Anderson, L. B., Mat. Res. Sco. Sym. Proc., Vol. 182, p. 275, 1990.Google Scholar
[7] Ghadini, G. and Modelli, A. in Insulating Films On Semiconductors, edited by Simonne, J. J. and Buxo, J., (Elsevier Science Publishers, 1986), p. 141.Google Scholar
[8] Runyan, W. R. and Bean, K. E., Semiconductor Integrated Circuit Processing Technology, (Addison-Wesley Publishing Company), 1990, p. 97.Google Scholar