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Effect of Oxidizer on Chemical Vapor Deposited Hafnium Oxide-Based Nanostructures and the Engineering of their Interfaces with Si(100)

Published online by Cambridge University Press:  01 February 2011

Manish K. Singh ,
Rajesh Katamreddy  and
Christos G. Takoudis
Manish K. Singh
Affiliation:
msingh9@uic.edu, University of Illinois at Chicago, Chemical Engineering, 810 S Clinton St, Chicago, IL, 60607, United States
Rajesh Katamreddy
Affiliation:
rkatam1@uic.edu, University of Illinois at Chicago, Department of Chemical Engineering, 810 S Clinton St, Chicago, IL, 60607, United States
Christos G. Takoudis
Affiliation:
takoudis@uic.edu, University of Illinois at Chicago, Department of Bioengineering, 851 S Morgan St, Chicago, IL, 60607, United States
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Abstract

Thin films of hafnium oxide were deposited on silicon substrates using tetrakis-diethylamino hafnium as precursor. Two different oxidizers: (a) ozone/oxygen mixture, and (b) dry oxygen were used for comparative study of the effect of different oxidizers on the deposited films. The deposition using dry oxygen was carried out in a cold-wall rapid thermal processing metalorganic chemical vapor deposition (MOCVD) reactor, whereas ozone/oxygen mixture was used in a cold-wall atomic layer deposition (ALD) reactor. Annealing studies were carried out at 600 and 800°C in high-purity argon at atmospheric pressure. X-ray photoelectron spectroscopy (XPS) analyses of as-deposited and annealed films were performed to study the HfO2/Si interface. The films deposited using these two different oxidizers appeared to be of comparable quality. Silicon oxide formation at the interface occurred after annealing at 600°C and it increased upon further annealing at 800 °C.

Keywords

chemical vapor deposition (CVD) (deposition)x-ray photoelectron spectroscopy (XPS)organometallic
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 996: Symposium H – Characterization of Oxide/Semiconductor Interfaces for CMOS Technologies , 2007 , 0996-H05-10
Copyright
Copyright © Materials Research Society 2007

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