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Effect Of O2 Plasma Exposure On The Performance Of Polycrystalline Silicon Thin Film Transistors

Published online by Cambridge University Press:  15 February 2011

Chul Ha Kim ,
Il Lee ,
Ki Soo Sohn ,
Su Chul Chun  and
Jin Jang
Chul Ha Kim
Affiliation:
Orion Electrics, Gumi–shi, Kyungpook 730–030, Korea
Il Lee
Affiliation:
Orion Electrics, Gumi–shi, Kyungpook 730–030, Korea
Ki Soo Sohn
Affiliation:
Kyungpook National University, Taegu 702-701, Korea
Su Chul Chun
Affiliation:
Orion Electrics, Gumi–shi, Kyungpook 730–030, Korea
Jin Jang
Affiliation:
Kyung Hee University, Dongdaemoon-ku, Seoul 130-701, Korea
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Abstract

We have studied the effect of O2 plasma exposure on the performance of polycrystalline silicon (poly-Si) thin film transistor (TFTs). The field effect mobility is increased and the drain currents at negative gate voltages are reduced by O2 plasma exposure on the surface of the TFT. These improvements in the performance of the poly-Si TFTs are larger in offset structure compared to overlap one. We obtained the on/off current ratio of ∼ 108 after O2 plasma exposure for the poly-Si TFTs with 3 or 4 μm offset length.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 345: Symposium M – Flat Panel Display Materials , 1994 , 99
Copyright
Copyright © Materials Research Society 1994

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