Hostname: page-component-8448b6f56d-c4f8m Total loading time: 0 Render date: 2024-04-24T07:06:47.845Z Has data issue: false hasContentIssue false
  • English
  • Français

Effect of Non-equilibrium Pulsed Ejection of Si Species into Background Gas on the Formation of Si Nanocrystallite and Nanocrystal-film

Published online by Cambridge University Press:  26 January 2011

Ikurou Umezu ,
Shunto Okubo  and
Akira Sugimura
Ikurou Umezu
Affiliation:
Department of Physics, Konan University, Kobe, 658-8501, Japan
Shunto Okubo
Affiliation:
Department of Physics, Konan University, Kobe, 658-8501, Japan
Akira Sugimura
Affiliation:
Department of Physics, Konan University, Kobe, 658-8501, Japan
Get access

Abstract

The Si nanocrystal-films are prepared by pulsed laser ablation of Si target in a mixture of helium and hydrogen gas. The total gas pressure and hydrogen partial gas pressure were varied to control structure of nanocrystal-film. The surface of Si nanocrystallite was hydrogenated and degree of hydrogenation increased with increasing hydrogen partial gas pressure. The aggregate structure of nanocrystal-film depended on both the total gas pressure and the hydrogen partial gas pressure. The former and the latter alter spatial confinement of Si species during deposition and the surface hydrogenation of individual nanocrystal, respectively. Spatial confinement increases probability of collision between nanocrystals in the plume. While, surface hydrogenation prevents coalescence of nanocrystals. The individual or aggregated nanocrystals formed in the plume reach the substrate and the nanocrystal-film is deposited on the substrate. The non-equilibrium growth processes during pulsed laser ablation are essential for the formation of the surface structure and the subsequent nanocrystal-film growth. Our results indicate that the structure of nanocrystal-film depends on the probabilities of collision and coalescence between nanocrystals in the plume. These probabilities can be varied by controlling the total gas pressure and the hydrogen partial gas pressure.

Keywords

Sinanostructurelaser ablation
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1305: Symposium AA – Group IV Semiconductor Nanostructures and Applications , 2011 , mrsf10-1305-aa17-36
Copyright
Copyright © Materials Research Society 2011

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Yamada, Y., Orii, T., Umezu, I., Takeyama, S., and Yoshida, T., Jpn. J. Appl. Phys. 35, 1361 (1996).Google Scholar
2. Makimura, T., Kunii, Y., and Murakami, K., Jpn. J. Appl. Phys., Part I 35, 4780 (1996).Google Scholar
3. Movtchan, I. A., Dreyfus, R. W., Marine, W., Sentis, M., Autric, M., Lay, G. L., and Merk, N., Thin Solid Films 255, 286 (1995).Google Scholar
4. Baeuerle, D., Laser Processing and Chemistry (Springer-Verlag, Berlin, 2000).Google Scholar
5. Chrisey, D. B. and Hubler, G. K., Pulsed Laser Deposition of Thin Films (Jhon Wiley & Sins, Inc, New York, 1994).Google Scholar
6. Geohegan, D. B., Puretzky, A. A., Duscher, G., and Pennycook, S. J., Appl. Phys. Lett. 72, 2987 (1998).Google Scholar
7. Muramoto, J., Inmaru, T., Nakata, Y., Okada, T., and Maeda, M., Appl. Phys. Lett. 77, 2334–2336 (2000).Google Scholar
8. Makimura, T., Mizuta, T., and Murakami, K., Appl. Phys. Lett. 76, 1401 (2000).Google Scholar
9. Luk’yanchuk, B. S., Marine, W., and Anisimov, S. I., Laser Physics 8, 291 (1998).Google Scholar
10. Umezu, I., Sugimura, A., Inada, M., Makino, T., Matsumoto, K., and Takata, M., Phys. Rev. B 76, 045328 (2007).Google Scholar
11. Umezu, I., Kondo, I., and Sugimura, A., Appl. Phys. A 93, 717 (2008).Google Scholar
12. Umezu, I., Makino, T., Inada, M., Matsumoto, K., and Sugimura, A., J. Appl. Phys. 103, 024305 (2008).Google Scholar
13. Umezu, I., Takata, M., and Sugimura, A., J. Appl. Phys. 103, 114309 (2008).Google Scholar
14. Umezu, I., Nakayama, Y., and Sugimura, A., J. Appl. Phys. 107, 094318 (2010).Google Scholar
15. Hawa, T. and Zachariah, M. R., Phys. Rev. B 69, 035417 (2004).Google Scholar
16. Hawa, T. and Zachariah, M. R., Phys. Rev. B 71, 165434 (2005).Google Scholar
17. Vicsec, T., Fractal Growth Phenomena (Word Scientific, Singapole, 1989).Google Scholar