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Effect of Microwave Treatment on the Bulk and Nearcontact Properties of Semiconductors of Technical Importance

Published online by Cambridge University Press:  10 February 2011

A. A. Belyaev
Affiliation:
Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, 45 prospect Nauki, 252650 Kiev-28, Ukraine
A. E. Belyaev
Affiliation:
Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, 45 prospect Nauki, 252650 Kiev-28, Ukraine
I. B. Ermolovich
Affiliation:
Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, 45 prospect Nauki, 252650 Kiev-28, Ukraine
S. M. Komirenko
Affiliation:
Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, 45 prospect Nauki, 252650 Kiev-28, Ukraine
R. V. Konakova
Affiliation:
Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, 45 prospect Nauki, 252650 Kiev-28, Ukraine
V. G. Lyapin
Affiliation:
Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, 45 prospect Nauki, 252650 Kiev-28, Ukraine
V. V. Milenin
Affiliation:
Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, 45 prospect Nauki, 252650 Kiev-28, Ukraine
Yu. A. Tkhorik
Affiliation:
Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, 45 prospect Nauki, 252650 Kiev-28, Ukraine
M. V. Shevelev
Affiliation:
E.O. Paton Electric Welding Institute, National Academy of Sciences of Ukraine, 11 Bozhenko St., 252650 Kiev-5, Ukraine
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Abstract

We investigated the effect of microwave radiation on the physico-chemical properties of some semiconductor materials (CdxHgl-xTe, GaAs) and metal (Al, Pt, Cr, Mo, W) - GaAs Schottky barrier diode structures. From comparison with the results of the other treatments (heat annealing, g-irradiation) some suggestions are made concerning possible mechanisms of the interaction between microwave radiation and the objects studied.

Type
Research Article
Copyright
Copyright © Materials Research Society 1996

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References

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