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Effect of Metal - Silicon Nanowire Contacts on the Performance of Accumulation Metal Oxide Semiconductor Field Effect Transistor

Published online by Cambridge University Press:  01 February 2011

Pranav Garg ,
Yi Hong ,
Md. Mash-Hud Iqbal  and
Stephen J. Fonash
Pranav Garg
Affiliation:
pxg913@psu.edu, Pennsylvania State University, Center for Nanotechnology Education and Utilization, University Park, Pennsylvania, United States
Yi Hong
Affiliation:
yuh13@psu.edu, Pennsylvania State University, Center for Nanotechnology Education and Utilization, University Park, Pennsylvania, United States
Md. Mash-Hud Iqbal
Affiliation:
mmhi2@cam.ac.uk, University of Cambridge, Centre for Advanced Photonics and Electronics, Cambridge, United Kingdom
Stephen J. Fonash
Affiliation:
fonash@engr.psu.edu, Pennsylvania State University, Center for Nanotechnology Education and Utilization, University Park, Pennsylvania, United States
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Abstract

Recently, we have experimentally demonstrated a very simply structured unipolar accumulation-type metal oxide semiconductor field effect transistor (AMOSFET) using grow-in-place silicon nanowires. The AMOSFET consists of a single doping type nanowire, metal source and drain contacts which are separated by a partially gated region. Despite its simple configuration, it is capable of high performance thereby offering the potential of a low manufacturing-cost transistor. Since the quality of the metal/semiconductor ohmic source and drain contacts impacts AMOSFET performance, we repot here on initial exploration of contact variations and of the impact of thermal process history. With process optimization, current on/off ratios of 106 and subthreshold swings of 70 mV/dec have been achieved with these simple devices

Keywords

Sinanoscalecore/shell
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1144: Symposium LL – Nanowires–Systhesis, Properties, Assembly and Applications , 2008 , 1144-LL06-02
Copyright
Copyright © Materials Research Society 2009

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References

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