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Effect of ITO Carrier Concentration on the Performance of Organic Light-Emitting Diodes

Published online by Cambridge University Press:  21 March 2011

Furong Zhu ,
Keran Zhang ,
C. H. A. Huan ,
A.T.S. Wee ,
Ewald Guenther  and
Chua Soo Jin
Furong Zhu
Affiliation:
Institute of Materials Research & Engineering, 3 Research Link, Singapore 117206
Keran Zhang
Affiliation:
Department of Physics, National University of Singapore Lower Kent Ridge Road, Singapore 119260
C. H. A. Huan
Affiliation:
Department of Physics, National University of Singapore Lower Kent Ridge Road, Singapore 119260
A.T.S. Wee
Affiliation:
Department of Physics, National University of Singapore Lower Kent Ridge Road, Singapore 119260
Ewald Guenther
Affiliation:
Institute of Materials Research & Engineering, 3 Research Link, Singapore 117206
Chua Soo Jin
Affiliation:
Institute of Materials Research & Engineering, 3 Research Link, Singapore 117206
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Abstract

The indium tin oxide (ITO) anodes for organic light emitting diode (OLED) were made from an oxidised target with In2O3 and SnO2 in a weight proportion of 9:1 using the RF magnetron sputtering method. The comparable ITO anodes with different carrier concentrations were prepared by varying the hydrogen partial pressure during film deposition. The current-luminance-voltage characteristics of the devices indicated that a high carrier concentration in ITO plays a role in improving OLED performance. A maximum efficiency of 3.8 cd/A was achieved when an ITO anode with a higher carrier concentration of 9×1020 cm−3 was used in a fluorene based OLED. This efficiency is about 1.5 times higher than that of an identical device made with an ITO anode having a lower carrier concentration of 5×1020 cm−3. The increase in electroluminescent efficie ncy reflects an enhanced hole-injection in the device. We consider that enhanced hole injection is due to the reduced band bending in ITO when it has a high carrier concentration

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 598: Symposium BB – Electrical, Optical, & Magenetic Properties...V , 1999 , BB11.11
Copyright
Copyright © Materials Research Society 1999

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References

1. Hamburg, I. and Granvist, C.G., J.Appl.Phys. 60, R123 (1986).Google Scholar
2. Zhu, F., Fuyuki, T., Matsunami, H. and Singh, J., Sol. Energy Mater. Sol. Cells, 39 (1995) 1.Google Scholar
3. Zhu, F., Jennings, P., Cornish, J., G.Hefter and Luczak, K., Sol. Energy Mater. Sol. Cells, 49 (1997) 163.Google Scholar
4. Sakai, H., Yoshida, T., Hama, T. and Ichikawa, Y., Jpn.J.Appl.Phys., 29, (1990) 630.Google Scholar
5. Wu, C.C., Wu, C.I., Sturm, J.C. and Kahn, A., Appl. Phys. Lett., 70, (1997) 1348.Google Scholar
6. Li, F., H.Tang and Shinar, J., Appl. Phys. Lett., 70, (1997) 2741.Google Scholar
7. S.A.Van Slyke, Chen, C.H. and Tang, C.W., Appl. Phys. Lett., 69, (1996) 2160.Google Scholar
8. Kim, J.S., Granström, M., Friend, R.H., Johansson, N., Salaneck, W.R., Daik, R., Feast, W.J. and Cacialli, F., J.Appl.Phys. 84, (1998) 6859.Google Scholar
9. Kim, J.S., Cacialli, F., Cola, A., Gigli, G. and Cingolani, R., Appl. Phys. Lett., 75, (1999) 19.Google Scholar
10. Zhou, X., He, J., Liao, L.S.. Lu, M., Xiong, Z.H., Ding, X.M., Hou, X.Y., Tao, F.G., Zhou, C.E. and Lee, S.T., Appl. Phys. Lett., 74, (1999) 609.Google Scholar
11. Parker, I.D. and Kim, H.H., Appl. Phys. Lett., 64, (1994) 1774.Google Scholar
12. Parker, I.D., J.Appl.Phys., 75, (1994) 1656.Google Scholar
13. Tokito, S., Noda, K. and Taga, Y., J.Phys. D. Appl. Phys, 29, (1996) 2750 Google Scholar
14. Ho, P.K.H., Granström, M., Friend, R.H. and Greenham, N.C., Adv.Matter., 10, (1998) 769.Google Scholar
15. Appleyard, S.F.J. and Willis, M.R., Optical Materials, 9 (1998) 120.Google Scholar
16. Zhang, K., Zhu, F., Huan, C.H.A. and Wee, A.T.S, J.Appl.Phys., 86, (1999) 974.Google Scholar
17. Banerjee, R., Das, D., Ray, S., Batabyal, A.K. and Barua, A.K., Sol. Energy Mater., 13, 11 (1986).Google Scholar
18. Honda, S., Watamori, M. and Oura, K., Thin Solid Films, 281–282, 206 (1996).Google Scholar
19. Fan, J.C.C. and Goodenough, J.B., J.Appl.Phys., 48, (1977) 3524.Google Scholar
20. Joaquim, Ana C. Arias. Lima, R.de and Hummelgen, Ivo A., Adv.Matter., 10, (1998) 392.Google Scholar
21. Meerakker, J.E.A.M. ven den, Meulenkamp, E.A. and Scholten, M., J.Appl.Phys., 74, (1993) 3282.Google Scholar