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The Effect of Growth Stoichiometry on the GaN Dislocation Core Structure

Published online by Cambridge University Press:  11 February 2011

Marcus Q. Baines ,
David Cherns ,
Julia W. P. Hsu  and
Michael J. Manfra
Marcus Q. Baines
Affiliation:
H.H. Wills Physics Laboratory, University of Bristol, Tyndall Avenue, Bristol, BS8 1TL, UK
David Cherns
Affiliation:
H.H. Wills Physics Laboratory, University of Bristol, Tyndall Avenue, Bristol, BS8 1TL, UK
Julia W. P. Hsu
Affiliation:
Bell Laboratories, Lucent Technologies, 700 Mountain Avenue, Murray Hill, NJ 07974
Michael J. Manfra
Affiliation:
Bell Laboratories, Lucent Technologies, 700 Mountain Avenue, Murray Hill, NJ 07974
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Abstract

Plan-view transmission electron microscopy was used to study the core structures of different dislocations in (0001) GaN layers grown under Ga-rich and Ga-lean conditions by molecular beam epitaxy. In Ga-rich samples at least one third of mixed type dislocations were open-core, and edge dislocations were observed to be closed-core. In contrast, under Ga-lean conditions, all dislocations were observed to be closed-core, and many were associated with pits at the sample surface. High resolution studies of the open core dislocations revealed that many were decorated with a disordered deposit, the origin of which is discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 743: Symposium L – GaN and Related Alloys , 2002 , L2.5
Copyright
Copyright © Materials Research Society 2003

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References

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