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Effect of Growth Conditions on Structural and Electrical Properties of Ga-doped ZnO Films Grown by Plasma-assisted MBE

Published online by Cambridge University Press:  31 January 2011

Vitaliy Avrutin ,
H.Y. Liu ,
Natalia Izyumskaya ,
Michael A. Reshchikov ,
Ümit Özgür ,
A.V. Kvit ,
Paul Voyles  and
Hadis Morkoç
Vitaliy Avrutin
Affiliation:
vavrutin@vcu.eduv.avrutin@mail.ru, Virginia Commonwealth University, Electrical and Computer Engineering, 601 West Main St., Richmond, Virginia, 23284, United States, 1 (804)827 7000 ext 357, 1 (804)828 4269
H.Y. Liu
Affiliation:
huiyongliuster@gmail.com, Virginia Commonwealth University, Electrical and Computer Engineering, Richmond, Virginia, United States
Natalia Izyumskaya
Affiliation:
nizioumskaia@vcu.edu, Virginia Commonwealth University, Electrical and Computer Engineering, Richmond, Virginia, United States
Michael A. Reshchikov
Affiliation:
mreshchi@vcu.edu, Virginia Commonwealth University, Physics, 701 W. Grace St., Richmond, Virginia, 23284, United States, 804-828-1613, 804-828-7073
Ümit Özgür
Affiliation:
uozgur@vcu.edu, Virginia Commonwealth University, Richmond, Virginia, United States
A.V. Kvit
Affiliation:
kvit@wisc.edu, University of Wisconsin-Madison, Materials Science and Engineering, Madison, Wisconsin, United States
Paul Voyles
Affiliation:
voyles@engr.wisc.edu, University of Wisconsin-Madison, Materials Science and Engineering, Madison, Wisconsin, United States
Hadis Morkoç
Affiliation:
hmorkoc@vcu.eduhmorkoc@vcu.edu, Virginia Commonwealth University, Electrical and Computer Engineering, 601 W Main St, Richmond, Virginia, 23284-3072, United States, 804 827 3765, 804 827 0006
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Abstract

ZnO has recently attracted a great deal of attention as a material for transparent contacts in light emitters and adsorbers. ZnO films heavily doped with Ga (carrier concentration in the range of 1020 - 1021 cm-3) were grown on a-plane sapphire substrates by RF plasma-assisted molecular beam epitaxy. Oxygen pressure during growth (i.e. metal (Zn+Ga)–to–oxygen ratio) was found to have a crucial effect on structural, electrical, and optical properties of the ZnO:Ga films. As-grown layers prepared under metal-rich conditions exhibited resistivities below 3×10-4 Ω-cm and an optical transparency exceeding 90% in the visible spectral range. In contrast, the films grown under the oxygen-rich conditions required thermal activation and showed inferior structural, electrical, and optical characteristics even after annealing.

Keywords

molecular beam epitaxy (MBE)II-VIelectrical properties
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1201: Symposium H – Zinc Oxide and Related Materials-2009 , 2009 , 1201-H05-20
Copyright
Copyright © Materials Research Society 2010

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References

1 Kim, S. J., IEEE Photon. Technol. Lett. 17, 1617 (2005).Google Scholar
2 Chen, H. H., Pasquier, A.D., Saraf, G., Zhong, J., and Lu, Y.C., Semicond. Sci. Technol. 23, 045004 (2008).10.1088/0268-1242/23/4/045004Google Scholar
3 Tark, S.J., Kang, M.G., Park, S., Jang, J. H., Lee, J.C., Kim, W.M., Lee, J.S., Kim, D., Curr. Appl. Phys., 9, 1318 (2009).10.1016/j.cap.2008.12.015Google Scholar
4 Agura, H., Suzuki, H., Matsushita, T., Aoki, T., and Okuda, M., Thin Solid Films, 445, 263 (2003).10.1016/S0040-6090(03)01158-1Google Scholar
5 Park, S.-M., Ikegami, T., Ebihara, K., Thin Solid Films, 513, 90 (2006).10.1016/j.tsf.2006.01.051Google Scholar
6 Ohta, H., Orita, M., Hirano, M., Tanji, H., Kawazoe, H., and Hosono, H., Appl. Phys. Lett., 76, 2740 (2000).10.1063/1.126461Google Scholar
7 Yang, Z., Look, D. C., and Liu, J. L., Appl. Phys. Lett. 94, 072101 (2009).10.1063/1.3080204Google Scholar
8 Yamada, T., Miyake, A., Kishimoto, S., Makino, H., Yamamoto, N., and Yamamoto, T., Appl. Phys. Lett. 91, 051915 (2007).10.1063/1.2767213Google Scholar
9 Park, W.J., Shin, H.S., Ahn, B.D., Kim, G.H., Lee, S.M., Kim, K.H., and Kim, H.J., Appl. Phys. Lett. 93, 083508 (2008).10.1063/1.2976309Google Scholar
10 Kato, H., Sano, M., Miyamoto, K., Yao, T., J. Cryst. Growth 237-239, 538 (2002).10.1016/S0022-0248(01)01972-8Google Scholar
11 Ko, H. J., Chen, Y. F., Hong, S. K., Wenisch, H., Yao, T., and Look, D. C., Appl. Phys. Lett. 77, 3761 (2000).10.1063/1.1331089Google Scholar
12 Muranaka, T., Nisii, A., Uehara, T., Sakano, T., Nabetani, Y., Akitsu, T., Kato, T., Matsumoto, T., Hagihara, S., Abe, O., Hiraki, S. and Fujikawa, Y., J. Korean Phys. Soc. 53, 2947 (2008).10.3938/jkps.53.2947Google Scholar
13 Liu, H.Y., Avrutin, V., Izyumskaya, N., Reshchikov, M.A., Özgür, Ü., and Morkoç, H., submitted to Phys. Stat. Sol.: Rapid Res. Lett.Google Scholar