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The Effect of Ge Segregation on Oxidation of Si

Published online by Cambridge University Press:  22 February 2011

E. C. Frey ,
N. R. Parikh ,
M. L. Swanson ,
M. Z. Numan  and
W. K. Chu
E. C. Frey
Affiliation:
Department of Physics, University of North Carolina, Chapel Hill, NC 27599-3255
N. R. Parikh
Affiliation:
Department of Physics, University of North Carolina, Chapel Hill, NC 27599-3255
M. L. Swanson
Affiliation:
Department of Physics, University of North Carolina, Chapel Hill, NC 27599-3255
M. Z. Numan
Affiliation:
Currently at Department of Physics, Indiana University of Pennsylvania, Indiana, PA 15705
W. K. Chu
Affiliation:
Department of Physics, University of North Carolina, Chapel Hill, NC 27599-3255
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Abstract

We have studied oxidation of various Si samples including: Ge implanted Si, CVD and MBE grown Si(0.4–4% Ge) alloys, and MBE grown Si-Si(Ge) superlattices. The samples were oxidized in pyrogenic steam (800–1000°C, atmospheric pressure) and at low temperature and high pressure (740°C, 205 atm of dry O2). The oxidized samples were analyzed with RBS/channeling and ellipsometry.

An enhanced oxidation rate was seen for all Ge doped samples, compared with rates for pure Si. The magnitude of the enhancement increased with decreasing oxidation temperature. For steam oxidations the Ge was segregated from the oxide and formed an epitaxial layer at the Si-SiO2 interface; the quality of the epitaxy was highest for the highest oxidation temperatures. For high pressure oxidation the Ge was trapped in the oxide and the greatest enhancement in oxidation rate (>100%) was observed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 105: Symposium F – SiO2 and Its Interfaces , 1987 , 277
Copyright
Copyright © Materials Research Society 1988

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References

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