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Effect of Fluorine Addition to Plasma-Enhanced Chemical Vapor Deposition Silicon Oxide Film

Published online by Cambridge University Press:  15 February 2011

S. W. Lim ,
M. Miyata ,
T. Naito ,
Y. Shimogaki ,
Y. Nakano ,
K. Tada  and
H. Komiyama
S. W. Lim
Affiliation:
Department of Chemical System Engineering, University of Tokyo
M. Miyata
Affiliation:
Department of Chemical System Engineering, University of Tokyo
T. Naito
Affiliation:
Department of Chemical System Engineering, University of Tokyo
Y. Shimogaki
Affiliation:
Department of Chemical System Engineering, University of Tokyo
Y. Nakano
Affiliation:
Department of Electronic Engineering, University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113, Japan, limsw@komiyama.t.u-tokyo.ac.jp
K. Tada
Affiliation:
Department of Electronic Engineering, University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113, Japan, limsw@komiyama.t.u-tokyo.ac.jp
H. Komiyama
Affiliation:
Department of Chemical System Engineering, University of Tokyo
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Abstract

One solution to reduce the time constant of ultra large scale integrated circuit (ULSI) is the use of a low dielectric constant intermetal film like fluorinated silicon oxide (SiOF). We could obtain SiOF films with low dielectric constant as low as 2.6 and good step coverage by adding CF4 to SiH4 and N2O in plasma-enhanced chemical vapor deposition (PECVD) process. To investigate the dielectric constants due to each polarization and the reason for the decrease in the dielectric constant, we used capacitance-voltage (C-V) and ellipsometry measurements, and Kramers-Kronig transformation. The decrease in dielectric constant could not be completely explained by the reduction in ionic and electronic polarization. We could detect silanol groups, Si-OH in the films and their decrease with increasing CF4 flow rate. It is suggested that the main polarization component to decrease dielectric constant is such as orientational polarization. The step coverage of film was improved by adding CF4. It is suggested that the reduction in the sticking probability of films forming species due to the change in surface state improved the step coverage.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 443: Symposium H – Low-Dielectric Constant Materials II , 1996 , 143
Copyright
Copyright © Materials Research Society 1997

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