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Effect of Excimer Laser Annealing on Optical Properties of GaN Films Deposited by R.F. Magnetron Sputtering

Published online by Cambridge University Press:  21 March 2011

Man Young Sung
Affiliation:
Department of Electrical Engineering, Korea University, 1,5-Ka Anam-dong, Sungbuk-ku, Seoul 136-701, South Korea.
Woong-Je Sung
Affiliation:
Department of Electrical Engineering, Korea University, 1,5-Ka Anam-dong, Sungbuk-ku, Seoul 136-701, South Korea.
Yong-Il Lee
Affiliation:
Department of Electrical Engineering, Korea University, 1,5-Ka Anam-dong, Sungbuk-ku, Seoul 136-701, South Korea.
Chun-Il Park
Affiliation:
Department of Electrical Engineering, Korea University, 1,5-Ka Anam-dong, Sungbuk-ku, Seoul 136-701, South Korea.
Woo-Boem Choi
Affiliation:
Department of Electrical Engineering, Korea University, 1,5-Ka Anam-dong, Sungbuk-ku, Seoul 136-701, South Korea.
Sangsig Kim
Affiliation:
Department of Electrical Engineering, Korea University, 1,5-Ka Anam-dong, Sungbuk-ku, Seoul 136-701, South Korea.
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Abstract

Abstract:GaN thin films on sapphire were grown by RF magnetron sputtering with ZnO buffer layer. The tremendous mismatch between the lattices of GaN and sapphire can be partly overcome by the use of thin buffer layer of ZnO. The dependence of GaN film quality on ZnO buffer layer was investigated by X-ray diffraction(XRD). The properties of the sputtered GaN are strongly dependent on ZnO buffer layer thickness. The optimum thickness of ZnO buffer layer is around 30nm. Using XRD analysis, we have found the optimal substrate temperature which can grow high quality GaN thin film. In addition, the effect of excimer laser annealing(ELA) on structural and electrical properties of GaN thin films was investigated. The surface roughness and images according to the laser energy density were investigated by atomic force microscopy(AFM) and it was confirmed that the crystallization was improved by increasing laser energy density.

Type
Research Article
Copyright
Copyright © Materials Research Society 2002

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