Hostname: page-component-848d4c4894-tn8tq Total loading time: 0 Render date: 2024-07-01T04:11:33.442Z Has data issue: false hasContentIssue false
  • English
  • Français

Effect of Electron Incidence in Epitaxial Growth of CeO2(110) Layers on Si(100) Substrates

Published online by Cambridge University Press:  15 February 2011

Tomoyasu Inoue ,
Yasuhiro Yamamoto  and
Masataka Satoh
Tomoyasu Inoue
Affiliation:
Department of Electronic Engineering, Iwaki Meisei University, Iwaki, Fukushima 970, Japan
Yasuhiro Yamamoto
Affiliation:
Department of Electronic Informatics, Hosei University, Koganei, Tokyo 184, Japan
Masataka Satoh
Affiliation:
Research Center of Ion Beam Technology, Hosei University, Koganei, Tokyo 184, Japan
Get access

Abstract

With the aim of lowering epitaxial growth temperature, the effect of electron incidence is studied in the epitaxial growth of CeO2(110) layers on Si(100) substrates by electron-beam evaporation in an ultrahigh vacuum. Two growth methods are employed: evaporation under substrate bias application and electron-beam assisted evaporation. In evaporation at positive substrate bias, electrons and anions from an evaporation source are attracted to the substrate surface, resulting in successful epitaxial temperature lowering. It is clarified that facilitation of the epitaxial growth is attributed only to electron incidence. The electronic current component is measured to be on the order of 10−4 A, about half of the total current. In using electron-beam assisted evaporation for higher current (10−3 A), electron-beam irradiation is demonstrated to have a much greater effect in both the growth temperature lowering and the crystalline quality improvement. The epitaxial growth facilitation effect increases with electron energy in both evaporation methods. It is clarified that the epitaxial growth temperature is lowered to 720°C, i. e., epitaxial growth temperature lowering of ∼100°C compared with the conventional growth method, both by evaporation with substrate bias at +240 V and 240 eV-electron-beam assisted evaporation, wherein the latter produces higher crystalline quality layers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 474: Symposium L – Epitaxial Oxide Thin Films III , 1997 , 321
Copyright
Copyright © Materials Research Society 1997

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Inoue, T., Yamamoto, Y., Koyama, S., Suzuki, S., and Ueda, Y., Appl. Phys. Lett. 56, 1332 (1990).Google Scholar
2. Yoshimoto, M., Nagata, H., Tsukahara, T., and Koinuma, H., Jpn. J. Appl. Phys. 29, L1199 (1990).Google Scholar
3. Inoue, T., Osonoe, M., Tohda, H., Hiramatsu, M., Yamamoto, Y., Yamanaka, A., and Nakayama, T., J. Appl. Phys. 69, 8313 (1991).Google Scholar
4. Yaegashi, S., Kurihara, T., Hoshi, H. and Hasegawa, H., Jpn. J. Appl. Phys. 33, 270 (1994).Google Scholar
5. Luo, L., Wu, X. D., Dye, R. C., Muenchauson, R. E., Folton, S. R., Coulter, Y., Maggiore, C. J., and Inoue, T., Appl. Phys. Lett. 59, 2043 (1991).Google Scholar
6. Inoue, T., Yamamoto, Y., Satoh, M., Ohsuna, T., Myoren, H. and Yamashita, T., Proc. Mat. Res. Soc. 341, Epitaxial Oxide Thin Films and Heterostructures, 101–106 (1994).Google Scholar
7. Yoshimoto, M., Shimozono, K., Maeda, T., Ohnishi, T., Kumagai, M., Chikyow, T., Ishiyama, O., Shinohara, M. and Koinuma, H., Jpn. J. Appl. Phys. 34, L688 (1995).Google Scholar
8. Huang, D., Qin, F., Yao, Z., Ren, Z., Lin, L., Gao, W. and Ren, Q., Appl. Phys. Lett 67, 3724 (1995).Google Scholar
9. Inoue, T., Yamamoto, Y. and Satoh, M., Jpn. J. Appl. Phys. 35, L1685 (1996).Google Scholar
10. Inoue, T., Yamamoto, Y. and Satoh, M., to be published in Proc. Mat. Res. Soc. 441, Thin Films: Surface and Morphology. Google Scholar
11. Sugiyama, T. and Itoh, T., J. Electrochem. Soc. 133, 604 (1986).Google Scholar
12. Izumi, A., Tsutsui, K. and Furukawa, S., J. Appl. Phys. 75, 2307 (1994).Google Scholar
13. Spear, W. E., Proc. Phys. Soc. (London) B68, 991 (1955).Google Scholar
14. Borom, M. P. and Hanneman, R. E., J. Appl. Phys. 38, 2406 (1967).Google Scholar