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Effect of Dynamic Bias Stress (AC) In Short-Channel (L=1.5μm) p-Type polycrystalline Silicon (poly-Si) Thin Film Transistors (TFTs) on the glass substrate

Published online by Cambridge University Press:  20 June 2011

Sung-Hwan Choi
Affiliation:
School of Electrical Engineering and Computer Science, Seoul National University, 599 Gwanangno, Gwanak-gu, Seoul, 151-744, Korea.
Yeon-Gon Mo
Affiliation:
Corporate R&D Center, Samsung Mobile Display Co. Ltd., Yongin-City, Kyeonggi-do, Korea.
Min-Koo Han
Affiliation:
School of Electrical Engineering and Computer Science, Seoul National University, 599 Gwanangno, Gwanak-gu, Seoul, 151-744, Korea.
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Abstract

We have investigated the stability of short channel (1.5μm) p-Type polycrystalline silicon (poly-Si) Thin Film Transistors (TFTs) on the glass substrate under AC bias stress. The variation of threshold voltage in short channel poly-Si TFT was considerably higher than that of long channel poly-Si TFT. Threshold voltage of the short channel TFT was considerably moved to the positive direction during AC bias stress, whereas the threshold voltage of a long channel was rarely moved. The variation of threshold voltage in the short channel p-type TFT under AC bias stess was more compared to that under DC bias stress. The threshold voltage of short channel (L=1.5μm) poly-Si TFT was increased about -7.44V from -0.305V to -7.745V when VGS = 5 (base value) ~ -15V (peak value), VDS = -15V was applied for 3,000 seconds. This positive shift of threshold voltage and significantly degraded s-swing value in the short channel TFT under dynamic stress (AC) may be due to the increase of the stress-induced trap state density at gate insulator / channel interface region.

Type
Research Article
Copyright
Copyright © Materials Research Society 2011

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References

REFERENCES

1. Stewart, M., IEEE Trans. on Electron Devices, 48, 845 (2001).10.1109/16.918227Google Scholar
2. Kumar, A. , K. P. and Shin, J. K. O., in IEDM Tech. Dig., pp. 515 (1997).Google Scholar
3. Lee, J. W., Lee, N. I., and Han, C. H., IEEE Electron Devices Lett., 19, 458 (1998).Google Scholar
4. Lee, J.-W., Lee, N.-I. and Han, C.-H., Jpn. J. Appl. Phys., 37, 1047 (1998).10.1143/JJAP.37.1047Google Scholar
5. Choi, S.-H., Kim, S.-J., Mo, Y.-G., Kim, H.-D., and Han, M.-K., Jpn. J. Appl. Phys., 49, 03CA04-1 (2010).Google Scholar
6. Choi, S.-H., Shin, H.-S., Mo, Y.-G., Kim, H.-D., and Han, M.-K., Jpn. J. Appl. Phys., 48, 03B011-1 (2009).Google Scholar
7. Park, S.-G., Lee, S.-Y., Woo, J.-S., Yoo, J.-S. and Han, M.-K., ECS Trans., 33, 2010.Google Scholar
8. Inoue, S., Ohshima, H., and Shimoda, T., in IEDM Tech. Dig., pp.527530 (1997).Google Scholar
9. Tsuchiya, T., Frey, J., IEEE Electron Device Lett., 6, 8 (1985).10.1109/EDL.1985.26024Google Scholar
10. Rodder, M., IEEE Electron Devices Lett., 11, 346 (1990).10.1109/55.57929Google Scholar
11. Hack, M., Lewis, A. G., and Wu, I., IEEE Trans. on Electron Devices, 40, 890, (1993).10.1109/16.210195Google Scholar
12. Huang, C.-Y., Teng, T.-H., Tsai, J.-W. and Cheng, H.-C., Jpn. J. Appl. Phys., 39, 3867 (2000).10.1143/JJAP.39.3867Google Scholar