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Effect of different annealing procedures on the microstructure and the electrical properties of CSD derived (Ba,Sr)TiO3 thin films.

Published online by Cambridge University Press:  28 July 2011

Sandip Halder
Affiliation:
Institute für Werkstoffe der Elektrotechnik- II, RWTH Aachen, Germany
Theodor Schneller
Affiliation:
Institute für Werkstoffe der Elektrotechnik- II, RWTH Aachen, Germany
Rainer Waser
Affiliation:
Institute für Werkstoffe der Elektrotechnik- II, RWTH Aachen, Germany Institut für Festkoerperforschung, Forchungzentrum Juelich, Juelich, Germany
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Abstract

Processing of BST thin films is becoming more and more important for microwave electronics and for its probable incorporation in future high density DRAM's. A co-relation between processing and final device characteristics is of utmost importance. Differences in microstructure and electrical properties were observed when chemical solution deposited thin films were annealed using a conventional diffusion furnace, rapid thermal annealing furnace with different heating ramps, and a hot plate for pyrolysis prior crystallization. The solution was made with the propionate route and then deposited on Pt coated silicon wafers. Cross-sectional SEM's were performed on the different films. It was found that the microstructure depended on the annealing method of the film. The electrical properties of the films were also found to vary considerably. Frequency dependence of the dielectric constant was studied. The leakage study on different films was performed at different temperatures.

Type
Research Article
Copyright
Copyright © Materials Research Society 2004

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