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The Effect of Cross-sectional Geometry on ZT Enhancement in Rough Silicon Nanostructures

Published online by Cambridge University Press:  01 February 2011

Jyothi Swaroop Sadhu ,
Marc G Ghossoub  and
Sanjiv Sinha
Jyothi Swaroop Sadhu
Affiliation:
sadhu1@illinois.edu, University of Illinois Urbana Champaign, Mechanical Science & Eng, Champaign, Illinois, United States
Marc G Ghossoub
Affiliation:
ghossou1@illinois.edu, University of Illinois at Urbana-Champaign, 1206 West Green St.,, Room 158, Urbana, Illinois, 61801, United States
Sanjiv Sinha
Affiliation:
sanjiv@illinois.edu, University of Illinois, Mechanical Science & Eng, 1206 W Green St, Rm 228, Urbana, Illinois, 61801, United States
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Abstract

The dramatic reduction in the thermal conductivity of rough silicon nanowires is due to phonon localization in the wire resulting from multiple scattering of phonons from the rough walls. We report the dependence of thermal conductivity of the nanowires as a function of the surface roughness and the diameter of the wire by modeling the nanowire as a waveguide. In addition, we estimate the impact of boundary condition, dimensionality and cross section of rough wire on the thermal conductivity. This theoretical model gives insights for tailoring thermal conductivity and enhancing the ZT of silicon to 1 for its use in thermoelectrics

Keywords

thermoelectricthermal conductivitynanostructure
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1267: Symposium DD – Thermoelectric Materials 2010-Growth, Properties, Novel Characterization Methods and Applications , 2010 , 1267-DD09-08
Copyright
Copyright © Materials Research Society 2010

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References

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