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The Effect Of Composition Modification on the Optical Polarization Independence In Semiconductor Strain Quantum Wells

Published online by Cambridge University Press:  10 February 2011

Wallace C. H. Choy ,
Hao Feng ,
S. K. Kam  and
E. Herbert Li
Wallace C. H. Choy
Affiliation:
Department of Electrical and Electronic Engineering, University of Hong Kong, Pokfulam Road, Hong Kong, ehli@hkueee.hku.hk
Hao Feng
Affiliation:
Department of Electrical and Electronic Engineering, University of Hong Kong, Pokfulam Road, Hong Kong, ehli@hkueee.hku.hk
S. K. Kam
Affiliation:
Department of Electrical and Electronic Engineering, University of Hong Kong, Pokfulam Road, Hong Kong, ehli@hkueee.hku.hk
E. Herbert Li
Affiliation:
Department of Electrical and Electronic Engineering, University of Hong Kong, Pokfulam Road, Hong Kong, ehli@hkueee.hku.hk
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Abstract

Polarization independent quantum well (QW) materials operating under electroabsorption effect in optical switching and modulation devices are of intense interest recently. This is a theoretical analysis of the optical properties of strained InGaAs/InP QWs. The method of composition modification based on interdiffusion will be introduced to merge the heavy- and light- hole states in order to achieve polarization insensitivity. Results presented here show that the diffused QWs with and without as-growth tensile strain can both serve in polarization independent electro-absorption requirements. With a suitable design in the interdiffused QW materials, the optical polarization independence can operate from 1.465 to 1.540 μm (tunability of 75 nm) with a maximum absorption change of 2000 cm−1. In the case studied here, over 75% reduction in the required as-growth tensile strain is achieved as compared with the conventional rectangular QWs. This provides us with a simpler way to achieve high strain optical polarization independence through interdiffusion.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 417: Symposium EE – Optoelectronic Materials-Ordering, Composition Modulation, and Self-Assembled … , 1995 , 277
Copyright
Copyright © Materials Research Society 1996

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