Hostname: page-component-76fb5796d-22dnz Total loading time: 0 Render date: 2024-04-25T15:51:10.628Z Has data issue: false hasContentIssue false
  • English
  • Français

The Effect of Channel Recess and Passivation on 4H-SiC MESFETs

Published online by Cambridge University Press:  11 February 2011

Ho-Young Cha ,
Christopher I. Thomas ,
Goutam Koley ,
Lester F. Eastman  and
Michael G. Spencer
Ho-Young Cha
Affiliation:
Department of Electrical and Computer Engineering, Cornell University, Ithaca, NY 14853, U.S.A.
Christopher I. Thomas
Affiliation:
Department of Electrical and Computer Engineering, Cornell University, Ithaca, NY 14853, U.S.A.
Goutam Koley
Affiliation:
Department of Electrical and Computer Engineering, Cornell University, Ithaca, NY 14853, U.S.A.
Lester F. Eastman
Affiliation:
Department of Electrical and Computer Engineering, Cornell University, Ithaca, NY 14853, U.S.A.
Michael G. Spencer
Affiliation:
Department of Electrical and Computer Engineering, Cornell University, Ithaca, NY 14853, U.S.A.
Get access

Abstract

Channel-recessed 4H-SiC MESFETs were fabricated and demonstrated excellent small signal characteristics. A saturated current of 250 − 270 mA/mm at Vgs = 0 V and a maximum transconductance of 40 − 45 mS/mm were measured for channel-recessed devices with a gate length of 0.45 m. The three-terminal breakdown voltages (Vds) range from 120 V to 150 V. The Ft and Fmax of the 2 × 200 m devices were measured to be 14.5 GHz and 40 GHz, respectively. The channel recess technique results in a lower saturation current but higher breakdown voltage which makes it possible for the devices to operate at high voltages. Si3N4 passivation suppresses the instability in DC characteristics and improves CW power performance by reducing the surface effects. Less dispersion in the drain current during a power sweep was observed after passivation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 742: Symposium K – Silicon Carbide-Materials, Processing, and Devices , 2002 , K5.19
Copyright
Copyright © Materials Research Society 2003

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Sriram, S., Augustine, G., Burk, A. A., Glass, R. C., Hobgood, H. M., Orphanos, P. A., Rowland, L. B., Smith, T. J., Brandt, C. D., Driver, M. C., and Hopkins, R. H., Electron Device Lett., vol. 17, 369–371 (1996).Google Scholar
2. Binari, S. C., Klein, P. B., and Kazior, T. E., IEEE MTT-S, 823–1826 (2002).Google Scholar
3. Allen, S., Alcorn, T., Hagleitner, H., Henning, J., Janke, C., Ring, Z., Sriram, S., Ward, A., Wieber, K., and Palmour, J., presented at the ECSCRM 2002, Stockholm, Sweden (2002).Google Scholar