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Dynamic Behavior of Nano Second Pulsed Nd:Glass Laser Annealing in Ion Implanted Silicon

Published online by Cambridge University Press:  15 February 2011

M. Takai ,
Y. Sato ,
K. Murakami ,
K. Gamo ,
T. Minamisono  and
S. Namba
M. Takai
Affiliation:
Faculty of Engineering Science
Y. Sato
Affiliation:
Faculty of Engineering Science
K. Murakami
Affiliation:
Faculty of Engineering Science
K. Gamo
Affiliation:
Faculty of Engineering Science
T. Minamisono
Affiliation:
Faculty of Engineering Science
S. Namba
Affiliation:
Faculty of Engineering Science
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Abstract

Time resolved transmission (λ = 1060 nm) and reflectivity (λ = 632.8 nm) during 20 nsec Nd:glass laser annealing in ion implanted Si were measured to study dynamic behaviors of laser annealing. Transmitted laser energy was also measured to complement transient measurements. Transient transmitted light intensity was found to be almost completely quenched as would be expected from absorption by a molten Si layer.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 4: Symposium A – Laser and Electron-Beam Interactions with Solids , 1981 , 91
Copyright
Copyright © Materials Research Society 1982

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References

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