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Duty Cycle and Frequency Effects of Pulsed-DC Currents on Electromigration-Induced Stress in Al Interconnects

Published online by Cambridge University Press:  15 February 2011

Richard Frankovic
Affiliation:
Department of Electrical Engineering, University of Notre Dame, Notre Dame, IN 46556, and J. Joseph Clement, Digital Equipment Corp., 77 Reed Road, Hudson, MA 01749
Gary H. Bernstein
Affiliation:
Department of Electrical Engineering, University of Notre Dame, Notre Dame, IN 46556, and J. Joseph Clement, Digital Equipment Corp., 77 Reed Road, Hudson, MA 01749
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Abstract

The effects of the duty cycle and frequency of a pulsed-current stress on the critical length-current density product, (jlc) were measured using edge-displacement techniques. In our study, Al edge-displacement segments were stressed at a temperature of 200 °C and at peak pulsed-dc current densities below 6×105 A/cm2 in a nitrogen ambient. jlc was measured for duty cycles of 25%, 50%, 75% and 100% at 100 kHz, and for 50% duty cycle at lower frequencies. jlc was observed to increase with decreasing duty cycle and increasing frequency. We measured a 2.6-fold increase in jlc for the 25% duty cycle at 100 kHz as compared to dc. We have used the vacancy supersaturation model to predict the jlc enhancement for lower duty cycle operation.

Type
Research Article
Copyright
Copyright © Materials Research Society 1996

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References

1. Schoen, J. M., J Appl. Phys., 51, 508, (1980).Google Scholar
2. Hummel, R. E. and Hoang, H. H., J Appl. Phys., 65, 1929, (1989).Google Scholar
3. Towner, J.M. and van de Ven, E. P., Proc.21st Ann. Rel. Phys. Symp., 36, (IEEE, New York, 1983).Google Scholar
4. Brooke, L., Proc. 25th Ann. Rel. Phys. Symp., 136, (IEEE, New York, 1987)Google Scholar
5. Maiz, J. A. Proc. 27th Ann. Rel. Phys. Symp., 220, (IEEE, New York, 1989)Google Scholar
6. English, A. T., Tai, K. L., and Turner, P. A., Appl. Phys. Lett., 21, 397, (1972).Google Scholar
7. Black, J. R., Proc. IEEE, 57, 1587, (1969).Google Scholar
8. Blech, I.A., J Appl. Phys., 47, 1203, (1976).Google Scholar
9. Clement, J.J., J.Appl. Phys., 71, 4264, (1992).Google Scholar
10. Schreiber, H. U., Solid State Electronics, 28, 617, (1985).Google Scholar
11. Shono, K., Kuroki, T., Sekiya, H., and Yamada, N., Proc. 7th nt. IEEE VMIC, p. 99, (1990).Google Scholar