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Doping of Oxidized Float Zone Silicon by Thermal Donors - a Low Thermal Budget Doping Method for Device Applications?

Published online by Cambridge University Press:  01 February 2011

R. Job ,
A.G. Ulyashin ,
Y.L. Huang ,
W.R. Fahrner ,
E. Simoen ,
C. Claeys ,
F.-J. Niedernostheide ,
H.-J. Schulze  and
G. Tonelli
R. Job
Affiliation:
University of Hagen, P.O. Box 940, D-58084 Hagen, Germany
A.G. Ulyashin
Affiliation:
University of Hagen, P.O. Box 940, D-58084 Hagen, Germany
Y.L. Huang
Affiliation:
University of Hagen, P.O. Box 940, D-58084 Hagen, Germany
W.R. Fahrner
Affiliation:
University of Hagen, P.O. Box 940, D-58084 Hagen, Germany
E. Simoen
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
C. Claeys
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium Electr. Eng. Dept., KU Leuven, Kasteelpark Arenberg 10, B-3001 Leuven, Belgium
F.-J. Niedernostheide
Affiliation:
Infineon AG, P.O. Box 80 09 49, D-81609 Munich, Germany
H.-J. Schulze
Affiliation:
Infineon AG, P.O. Box 80 09 49, D-81609 Munich, Germany
G. Tonelli
Affiliation:
IFN, Via Livornese 1291, I-56010 Pisa, Italy
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Abstract

Thermal donor formation was studied in oxygen enriched high resistive float zone silicon (FZ Si:Oi). Such substrates are used e.g. for radiation hard detectors or high voltage devices. RF Plasma hydrogenation (110 MHz, 50 W) was carried out at 250°C for 1 hour. Subsequent annealing was done at 450°C/air for up to 50 h. The plasma treated and annealed FZ Si:Oi samples were analyzed by spreading resistance probe, capacitance-voltage and DLTS measurements. It is shown that a rapid formation of donors can be observed in oxidized FZ Si:Oi, but in a somewhat different way than in Czochralski (Cz) Si. While in Cz Si the hydrogen enhanced formation of ‘old’ thermal double donors occurs under the applied processes, in FZ Si:Oi most probably the formation of new hydrogen related shallow donors can be assumed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 719: Symposium F – Defect- and Impurity-Engineered Semiconductors and Devices III , 2002 , F9.5
Copyright
Copyright © Materials Research Society 2002

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