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Doping of C60 Films Using High Energy Boron Ion Implantation

Published online by Cambridge University Press:  15 February 2011

Zhong-Min Ren ,
Yuan-Cheng Du ,
Xia-Xing Xiong ,
Zhi-Feng Ying ,
Fu-Ming Li  and
Xing-Long Xu
Zhong-Min Ren
Affiliation:
Department of Physics, Fudan University, Shanghai, 200433, P.R. China
Yuan-Cheng Du
Affiliation:
Department of Physics, Fudan University, Shanghai, 200433, P.R. China
Xia-Xing Xiong
Affiliation:
Department of Physics, Fudan University, Shanghai, 200433, P.R. China
Zhi-Feng Ying
Affiliation:
Department of Physics, Fudan University, Shanghai, 200433, P.R. China
Fu-Ming Li
Affiliation:
Department of Physics, Fudan University, Shanghai, 200433, P.R. China
Xing-Long Xu
Affiliation:
Shanghai Institute of Metalallurgy, Academia Sinica
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Abstract

C60 films, which are deposited by partially ionized beam deposition (PIBD), are doped by 100 keV boron ion implantation at dose ranging from 3*1014 to 1*1016 cm2 The implantation process has been studied using Fourier transform infrared spectroscopy (FTIR), Raman spectra and X-ray diffraction (XRD) analyses. Almost all C60 soccer-balls in the doped region in the films are found to be broken at dose of 1*1016 cm2, while at dose less than 6*1014 cm2 a few C60 molecules remain undestroyed and maintain the original structural properties.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 359: Symposium G – Science and Technology of Fullerene Materials , 1994 , 433
Copyright
Copyright © Materials Research Society 1995

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References

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