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Dopant-Defect Interactions in II-VI Semiconductors Studied by PAC
Published online by Cambridge University Press: 26 February 2011
Abstract
The application of the perturbed γγ angular correlation technique (PAC) as an analytical tool for the characterisation of atomic defect configurations is discussed, using recent results on donor-acceptor pairs, which were observed in CdTe and other II-VI semiconductors by the radioactive donor 111In. For bulk CdTe crystals and MOCVD grown CdTe films, the role of the cation vacancy, group I and group V elements is discussed.
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- Copyright © Materials Research Society 1995
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