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Domain Structures and Current-Controlled Switching Characteristics of Micron Sized Permalloy Structures with Varying Aspect Ratio

Published online by Cambridge University Press:  01 February 2011

S. C. Seah ,
Y S Soh  and
V Ng
S. C. Seah
Affiliation:
g0500074@nus.edu.sg, National University of Singapore, Information Storage Materials Laboratory, Department of Electrical & Computer Engineering, 4 Engineering Drive 3, Singapore 117576, Singapore, N/A, N/A, Singapore
Y S Soh
Affiliation:
g0402641@nus.edu.sg, National University of Singapore, Information Storage Materials Laboratory, Department of Electrical & Computer Engineering, 4 Engineering Drive 3, Singapore 117576, Singapore, N/A, N/A, Singapore
V Ng
Affiliation:
elengv@nus.edu.sg, National University of Singapore, Information Storage Materials Laboratory, Department of Electrical & Computer Engineering, 4 Engineering Drive 3, Singapore 117576, Singapore, N/A, N/A, Singapore
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Abstract

Permalloy magnetic structures were fabricated using electron beam lithography and then deposited by evaporation followed by lift-off. The structures were studied for their magnetic domain properties with respect to their aspect ratio. Instead of conventional switching using a magnetic field, a current carrying conductor was used to switch the structures. The current value was gradually increased and magnetic force microscopy was used to study the domain changes of the remanent structures after every increment. At the same time, simulation is done using object-oriented micro-magnetic framework to compare with the experimental results.

Keywords

magnetic propertiesscanning probe microscopy (SPM)ferromagnetic
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 941: Symposium Q – Magnetic Thin Films, Heterostructures, and Device Materials , 2006 , 0941-Q04-04
Copyright
Copyright © Materials Research Society 2006

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References

1 Slaughter, J. M., Dave, R. W., DeHerrera, M., Durlam, M., Engel, B. N., Janesky, J., Rizzo, N. D., and Tehrani, S., “Fundamentals of MRAM Techonology” J. Supercon., Vol. 15, No. 1, pp.19־25, 2002.Google Scholar
2 Gomez, R. D., Luu, T. V., Pak, A. O., and Mayergoyz, I. D., “Domain wall motion in micronsized permalloy elements”, J. Appl. Phys., vol. 85, No. 8, pp. 4598–4600, 1999.Google Scholar
3 Lai, M. F., Wei, Z. H., Wu, J. C., Chang, C. R., W. Z. Hsieh and Lai, J. Y., “As-Deposited Magnetic States in Arrays of Rectangular Permalloy Elements” IEEE Trans. Magn., vol. 41, No. 2, pp. 944–946, 2005.Google Scholar
4 Chang, C. C., Chang, Y. C., Chung, W. S., Wu, J. C., Wei, Z. H., Lai, M. F., and Chang, C. R., “Influences of the Aspect Ratio and Film Thickness on Switching Properties of Elliptical Permalloy Elements”, IEEE Trans. Magn., vol. 41, No. 2, pp 947–949, 2005.Google Scholar
5 Klaui, M., Vaz, C.A.F., Heyderman, L. J., Rudiger, U., Bland, J. A. C., “Spin switching phase diagram of mesoscopic ring magnets”, J. Magn. Mat., vol.290–291, pp. 61–67, 2005 Google Scholar
6 Donahue, M. J. and Porter, D. G., “OOMMF User's Guide, online”, ver. 1.2a3, National Institute of Standards and Technology, Gaithersburg, 2002 Google Scholar