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Dlts Study of Oxide Traps Near the Si-SiO2 Interface

Published online by Cambridge University Press:  26 February 2011

D. Vuillaume  and
J. C. Bourgoin
D. Vuillaume
Affiliation:
Laboratoire de Physique des Solides, LA 253, CNRS, ISEN 41,Bd Vauban, 59046 LILLE Cedex, FRANCE
J. C. Bourgoin
Affiliation:
Groupe de Physique des Solides de l'ENS, LA 17, CNRS, Université Paris VII, Tour 23, 2 place Jussieu, 75221 PARIS Cedex 05, FRANCE
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Abstract

We have used the DLTS (Deep Level Transient Spectroscopy) technique to characterize the traps of the oxide layer near the Si-SiO2 interface. Using the so-called saturating pulse DLTS, no saturation is observed when all the fast interface states are filled. This unusual behavior is interpreted by taking into account tunneling emission from oxide traps situated near the Si-SiO2 interface. We show how the deconvolution between interface states and oxide traps is allowed by introducing a model of tunneling emission from oxide traps into Si substrate, for the derivation of the DLTS response. By this way a depth localisation of these oxide traps is obtained : about 10 to 30 Å from the interface. The experimental study of the filling kinetics allows the determination of the concentration of these oxide traps (≈ 107 to 108 cm-2) and their associated tunneling capture cross-section (≈ 10-22 to 10-21 cm2). The validity of the model and measurements is rapidly discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 54: Symposium E – Thin Films–Interfaces and Phenomena , 1985 , 587
Copyright
Copyright © Materials Research Society 1986

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References

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