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Dislocation Multiplication in the Early Stage of Deformation in MO Single Crystals

Published online by Cambridge University Press:  15 February 2011

L. M. Hsiung  and
D. H. Lassila
L. M. Hsiung
Affiliation:
Lawrence Livermore National Laboratory, Materials Science and Technology Division, L-369, P.O. Box 808, Livermore, CA 94551–9900, hsiung1@llnl.gov
D. H. Lassila
Affiliation:
Lawrence Livermore National Laboratory, Materials Science and Technology Division, L-369, P.O. Box 808, Livermore, CA 94551–9900
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Abstract

Initial dislocation structure in annealed high-purity Mo single crystals and deformation substructure in a crystal subjected to 1% compression have been examined and studied using transmission electron microscopy (TEM) techniques in order to investigate dislocation multiplication mechanisms in the early stage of plastic deformation. The initial dislocation density is in a range of 106 σ 107 cm−2, and the dislocation structure is found to contain many grown-in superjogs along dislocation lines. The dislocation density increases to a range of 108 σ 109 cm−2, and the average jog height is also found to increase after compressing for a total strain of 1%. It is proposed that the preexisting jogged screw dislocations can act as (multiple) dislocation multiplication sources when deformed under quasi-static conditions. The jog height can increase by stress-induced jog coalescence, which takes place via the lateral migration (drift) of superjogs driven by unbalanced line-tension partials acting on link segments of unequal lengths. The coalescence of superjogs results in an increase of both link length and jog height. Applied shear stress begins to push each link segment to precede dislocation multiplication when link length and jog height are greater than critical lengths. This “dynamic” dislocation multiplication source is suggested to be crucial for the dislocation multiplication in the early stage of plastic deformation in Mo.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 578: Symposia A/C – Multiscale Phenomena in Materials - Experiments in Modeling , 1999 , 119
Copyright
Copyright © Materials Research Society 2000

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References

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