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Direct Measurement of the Subsurface Hydrogen Barrier Layer in Plasma-Treated Silicon Ribbon

Published online by Cambridge University Press:  28 February 2011

A.E. Jaworowski ,
L.S. Wielunski  and
T.W. Listerman
A.E. Jaworowski
Affiliation:
Department of Physics, Wright State University, Dayton, Ohio 45435, USA
L.S. Wielunski
Affiliation:
Department of Physics, SUNY at Plattsburgh, Plattsburgh, New York 12301, USA
T.W. Listerman
Affiliation:
Department of Physics, Wright State University, Dayton, Ohio 45435, USA
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Abstract

The near-surface hydrogen profile was measured using the 15N hydrogen profiling technique in silicon ribbon grown by the edge-defined film-fed growth (EFG) process. This direct method has a high depth resolution of 10 - 30 Å, can be used to a depth of several microns, and can measure hydrogen in concentration of 100 at. ppm. By appropriate surface treatment we were able to observe for the first time the separation of the near-surface hydrogen profile in silicon from the surface hydrogen contamination layer. Using our technique, hydrogen profiling of the near-surface region revealed the existence of a subsurface hydrogen layer which acts as a barrier to the transfer of hydrogen into the bulk of both passivated and untreated silicon. The structure of this hydrogen barrier was measured for different plasma treatments.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 46: Symposium B – Microscopic Identification of Electronic Defects in Semiconductors , 1985 , 561
Copyright
Copyright © Materials Research Society 1985

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References

1. Seager, C.H. and Ginley, D.S., Appl.Phys.Lett. 34, 337 (1979).Google Scholar
2. Benton, J.L., Doherty, C.J., Ferris, S.D., Flamm, D.L., Kimerling, L.C. and Leamy, H.J., Appl.Phys.Lett. 36, 670 (1980).Google Scholar
3. Seager, C.H. and Ginley, D.S., J.Appl.Phys. 52, 1050 (1981).Google Scholar
4. Pearton, S.J. and Tavendale, A.J., Phys.Rev. B 26, 1105 (1982).Google Scholar
5. Johnson, N.M., Biegelsen, D.K. and Moyer, D., Appl.Phys.Lett. 40, 882 (1982).Google Scholar
6. Tavendale, A.J. and Pearton, S.J., J.Phys. C 16, 1665 (1983).Google Scholar
7. Pearton, S.J. and Haller, E.E., J.Appl.Phys. 54, 3613 (1983).Google Scholar
8. Pearton, S.J., Kahn, J.M., Hansen, W.L. and Haller, E.E., J.Appl.Phys. 55, 1464 (1984).CrossRefGoogle Scholar
9. Corbett, J.W., Sahu, S.N., Shi, T.S. and Snyder, L.C., Phys.Lett. 93A, 303 (1983).Google Scholar
10. Mainwood, A. and Stoneham, A.M., J.Phys. C: Solid State Phys. 17, 2513 (1984).Google Scholar
11. Hall, R.N., Proc. 13th Int. Conf. on Defects in Semiconductors, Coronado, 1984, edited by Kimerling, L.C. and Parsey, J.M. Jr, p. 759.Google Scholar
12. Pearton, S.J., Proc. 13th Int. Conf. on Defects in Semiconductors, Coronado, 1984, edited by Kimerling, L.C. and Parsey, J.M. Jr, p. 737.Google Scholar
13. Jaworowski, A.E. and Corbett, J.W., Proc. 13th Int. Conf. on Defects in Semiconductors, Coronado, 1984, edited by Kimerling, L.C. and Parsey, J.M. Jr, p. 767.Google Scholar
14. Lanford, W.A., Nucl.Inst.Meth. 149, 1 (1978).Google Scholar
15. Maurel, B. and Amsel, G., Nucl.Inst.Meth.Phys.Res. 218, 159 (1983).CrossRefGoogle Scholar
16. Damjantschitsch, H., Weiser, M., Heusser, G., Kalbitzer, S. and Mannsperger, H., Nucl.Inst.Meth.Phys.Res. 218, 129 (1983).Google Scholar
17. Lanford, W.A., J. Electroch.Soc. 127, 2 (1980).Google Scholar
18. Dube, C., Hanoka, J.I. and Sanstrom, D.B., Appl.Phys.Lett. 44, 425 (1984).Google Scholar
19. Wald, F.V., in: Crystals:Growth Properties and Appl. edited by Grab-maier, J. (Springer, Berlin, 1981) Vol. 5, pp. 147–198.Google Scholar
20. Martin, J.S. and Andrews, M.L., Aerospace Research Lab., Rept.No. 73-0155 (1973).Google Scholar