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Direct Measurement of the Reactivity of NH and oh on a Silicon Nitride Surface

Published online by Cambridge University Press:  22 February 2011

R. J. Buss ,
P. Ho ,
E. R. Fisher  and
William G. Breiland
R. J. Buss
Affiliation:
Sandia National Laboratories, Albuquerque, New Mexico, 87185-0367
P. Ho
Affiliation:
Sandia National Laboratories, Albuquerque, New Mexico, 87185-0367
E. R. Fisher
Affiliation:
Dept. of Chemistry, Colorado State University, Ft. Collins, CO 80523
William G. Breiland
Affiliation:
Sandia National Laboratories, Albuquerque, New Mexico, 87185-0367
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Abstract

In order to understand and successfully model the plasma processing used in device fabrication, it is important to determine the role played by plasma-generated radicals. We have used the IRIS technique (Imaging of Radicals Interacting with Surfaces) to obtain the reactivity of NH(X3∑-) and OH(X2II) at a silicon nitride film surface while the film is exposed to a plasma-type environment. The reactivity of NH was found to be zero both during exposure of the surface to an NH3 plasma and during active deposition of silicon nitride from a SiH4/NH3 plasma. No NH surface reaction was detectable for any rotational states of NH and over a surface temperature range of 300-700 K. OH radicals generated in an H2O plasma were found to have a reactivity of 0.57 on a room temperature oxidized silicon nitride surface. The OH reactivity falls to zero as the temperature of the substrate is raised.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 334: Symposium W – Gas-Phase and Surface Chemistry in Electronic Materials Processing , 1993 , 51
Copyright
Copyright © Materials Research Society 1994

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References

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