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Direct Formation of Thin Films and Epitaxial Overlayers at low Temperatures Using a Low-Energy (10–;500 ev) Ion Beam Deposition System*

Published online by Cambridge University Press:  25 February 2011

R. A. Zuhr ,
G. D. Alton ,
B. R. Appleton ,
N. Herbot ,
T. S. Noggle  and
S. J. Pennycook
R. A. Zuhr
Affiliation:
Oak Ridge National Laboratory, Oak Ridge, TN 37831 USA
G. D. Alton
Affiliation:
Oak Ridge National Laboratory, Oak Ridge, TN 37831 USA
B. R. Appleton
Affiliation:
Oak Ridge National Laboratory, Oak Ridge, TN 37831 USA
N. Herbot
Affiliation:
Oak Ridge National Laboratory, Oak Ridge, TN 37831 USA
T. S. Noggle
Affiliation:
Oak Ridge National Laboratory, Oak Ridge, TN 37831 USA
S. J. Pennycook
Affiliation:
Oak Ridge National Laboratory, Oak Ridge, TN 37831 USA
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Abstract

A low-energy ion beam deposition system has been developed at Oak Ridge National Laboratory and has been applied successfully to the growth of epitaxial films at low temperatures for a number of different elements. The deposition system utilizes the ion source and optics of a commercial ion implantation accelerator. The 35 keV mass- and energy-analyzed ion beam from the accelerator is decelerated in a four-element electrostatic lens assembly to energies between 10 and 500 eV for direct deposition onto a target under UHV conditions. Current densities on the order of 10 A/cm are achieved with good uniformity over a 1.4 cm diameter spot. The completed films are characterized by Rutherford backscattering, ion channeling, cross-section transmission electron microscopy, and x-ray diffraction. The effects of substrate temperature, ion energy, and substrate cleaning have been studied. Epitaxial overlayers which show good minimum yields by ion channeling (3–4%) have been produced at temperatures as low as 375°C for Si on Si(100) and 250°C for Ge on Ge(100) at growth rates that exceed the solid-phase epitaxy rates at these temperatures by more than an order of magnitude.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 93: Symposium C – Materials Modification and Growth Using Ion Beams , 1987 , 243
Copyright
Copyright © Materials Research Society 1987

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Footnotes

†

Present address: Massachusetts Institute of Technology, Cambridge, MA 02139 USA

*

Research sponsored by the Division of Materials Sciences, U.S. Department of Energy under contract DE-ACO5-840R21400 with Martin Marietta Energy Systems, Inc.

References

REFERENCES

1. Amano, J., Bryce, P., and Lawson, R.W.P., J. Vac. Sci. Technol. 13 (2), 591 (1976).Google Scholar
2. Amano, J. and Lawson, R.W.P., J. Vac. Sci. Technol. 15 (1), 118 (1978).Google Scholar
3. Amano, J., Thin Solid Films 92, 115 (1982).Google Scholar
4. Yagi, K., Tamura, S., and Tokyama, T., Jpn. J. Appl. Phys. 16, 245 (1982).Google Scholar
5. Tsukizoe, T., Nakai, T., and Ohmae, N., J. Appl. Phys. 42, 4770 (1977).Google Scholar
6. Tokuyama, T., Yagi, K., Miyake, K., Tamura, M., Natsuaki, N., and Tachi, S., Nucd. Instrum. Methods 182/183, 241 (1981).Google Scholar
7. Thomas, G.E., Beckers, L.J., Vrakking, J.J., and de Koning, B.B., J. Cryst. Growth 56, 557 (1982).Google Scholar
8. Miyake, K. and Tokuyama, T., Thin Solid Films 92, 123 (1982).Google Scholar
9. Zalm, P.C. and Beckers, L.J., Appl. Phys. Lett. 41 (2), 167 (1982).Google Scholar
10. Yamada, I., Inokawa, H., and Takage, T., Nucl. Instrum. Methods B 6, 439 (1985).Google Scholar
11. Herbots, N., Appleton, B.R., Noggle, T.S., Zuhr, R.A., and Pennycook, S.J., Nucl. Instrum. Methods B 13, 250 (1986).Google Scholar
12. Herbots, N., Appleton, B.R., Pennycook, S.J., Noggle, T.S., and Zuhr, R.A., in Beam-Solid Interactions and Phase Transformations, edited by Kurz, H., Olson, G.L., and Poate, J.M. (Materials Research Society, Pittsburgh, Pennsylvania, 1986), p. 369.Google Scholar
13. Appleton, B.R., Pennycook, S.J., Zuhr, R.A., Herbots, N., and Noggle, T.S., Nucl. Instrum. Methods B (in press, 1987).Google Scholar
14. Marshall, E.D., Wu, C.S., Pai, C.S., Scott, D.M., and Lau, S.S., Mat. Res. Soc. Symp. Proc. 47, 161 (1985).Google Scholar
15. Zuhr, R.A., Appleton, B.R., Herbots, N., Larson, B.C., Noggle, T.S., and Pennycook, S.J., J. Vac. Sci. Technol. A (in press, 1987).Google Scholar
16. Herbots, N., Appleton, B.R., Noggle, T.S., Pennycook, S.J., Zuhr, R.A., and Zehner, D.M., in Semiconductor-Based Heterostructures, edited by Green, M.L., Balin, J.E.E., Chin, G.Y., Deckman, H.W., Mayo, W., and Narashinham, D. (The Metallurgical Society, 1986), p. 335.Google Scholar
17. Appleton, B.R., Zuhr, R.A., Noggle, T.S., Herbots, N., and Pennycook, S.J., in Beam-Solid Interactions and Transient Processes, edited by Picraux, S.T., Thompson, M.O., and Williams, J.S. (Materials Research Society, Pittsburgh, Pennsylvania, 1986, in press).Google Scholar
18. Donovan, E.P., Spaepen, F., Turnbill, D., Poate, J.M., and Jacobson, D.C., J. Appl. Phys. 577, 1795 (1985).Google Scholar