Hostname: page-component-77c89778f8-7drxs Total loading time: 0 Render date: 2024-07-20T21:46:25.977Z Has data issue: false hasContentIssue false
  • English
  • Français

Diffusion Barrier Characteristics of Zirconium Diboride Films Grown by Remote Plasma CVD

Published online by Cambridge University Press:  10 February 2011

J. Sung ,
D. M. Goedde ,
G. S. Girolami  and
J. R. Abelson
J. Sung
Affiliation:
Department of Materials Science and Engineering, University of Illinois at Urbana Champaign,Urbana IL 61801
D. M. Goedde
Affiliation:
Department of Chemistry, University of Illinois at Urbana Champaign, Urbana IL 61801
G. S. Girolami
Affiliation:
Department of Chemistry, University of Illinois at Urbana Champaign, Urbana IL 61801
J. R. Abelson
Affiliation:
Department of Materials Science and Engineering, University of Illinois at Urbana Champaign,Urbana IL 61801
Get access

Abstract

Low resistivity and fully conformal ZrB2 thin films are deposited by remote plasma chemical vapor deposition using zirconium tetrahydroborate, Zr(BH4)4. The problems with thermal CVD using this precursor – excess B incorporation, oxygen contamination, and high resistivity – are eliminated by injecting atomic hydrogen from a remote microwave plasma source onto the substrate. Using this technique, the films are stoichiometric, have ∼ 40 μΩ-cm resistivity, < 4 at.% oxygen contamination, and are fully conformal in deep trenches and vias. We show that a 50 nm thick ZrB2 film on c-Si (100) prevents Cu in-diffusion after 1 hour annealing at 650°C.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 563: Symposium M – Materials Reliability in Microelectronics IX , 1999 , 39
Copyright
Copyright © Materials Research Society 1999

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Williams, W.S., JOM, 49 (3), 1997, p.38.Google Scholar
2. Grimhaw, M.P., Staton-Bevan, A.E, Materials Science & Engineering B, No 1, 1989, p. 21.Google Scholar
3. Oder, T.N., Williams, J.R., Mohney, S.E. and Crofton, J.., J. Elec. Materials, 27 (1), 1998, p. 12.Google Scholar
4. Takahashi, T.. and Kamiya, H., J. Cryst. Growth, 26 (1974) p. 203.Google Scholar
5. Jensen, J.A., Gozum, J.E., Pollina, D.M., J. Am. Chem. Soc., 110, 1988, p. 1643.Google Scholar
6. Wayda, A.L., Scheneemeyer, L.F.. and Opila, R.L., Appl. Phys. Lett, 53 (5), 1988, p. 361.Google Scholar
7. Test wafer is supplied by Dr. N. M. Russel at Texas Instrument Inc..Google Scholar