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Diffuse x-ray scattering from InGaAs/GaAs quantum dots

Published online by Cambridge University Press:  01 February 2011

Rolf Köhler ,
Daniil Grigoriev ,
Michael Hanke ,
Martin Schmidbauer ,
Peter Schäfer ,
Stanislav Besedin ,
Udo W. Pohl ,
Roman L. Sellin ,
Dieter Bimberg  and
Nikolai D. Zakharov
...Show all authors
Rolf Köhler
Affiliation:
Institut für Physik, Humboldt-Universität zu Berlin, Newtonstr. 15, D-12489 Berlin, Germany
Daniil Grigoriev
Affiliation:
Institut für Physik, Humboldt-Universität zu Berlin, Newtonstr. 15, D-12489 Berlin, Germany
Michael Hanke
Affiliation:
Institut für Physik, Humboldt-Universität zu Berlin, Newtonstr. 15, D-12489 Berlin, Germany
Martin Schmidbauer
Affiliation:
Institut für Physik, Humboldt-Universität zu Berlin, Newtonstr. 15, D-12489 Berlin, Germany
Peter Schäfer
Affiliation:
Institut für Physik, Humboldt-Universität zu Berlin, Newtonstr. 15, D-12489 Berlin, Germany
Stanislav Besedin
Affiliation:
Institut für Physik, Humboldt-Universität zu Berlin, Newtonstr. 15, D-12489 Berlin, Germany
Udo W. Pohl
Affiliation:
Institut für Festkörperphysik, Technische Universität, Hardenbergstr. 36, D-10623 Berlin, Germany
Roman L. Sellin
Affiliation:
Institut für Festkörperphysik, Technische Universität, Hardenbergstr. 36, D-10623 Berlin, Germany
Dieter Bimberg
Affiliation:
Institut für Festkörperphysik, Technische Universität, Hardenbergstr. 36, D-10623 Berlin, Germany
Nikolai D. Zakharov
Affiliation:
Max-Planck-Institut für Mikrostrukturphysik, Weinberg 2, D-06120 Halle, Germany
Peter Werner
Affiliation:
Max-Planck-Institut für Mikrostrukturphysik, Weinberg 2, D-06120 Halle, Germany
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Abstract

Multi-fold stacks of In0.6Ga0.4As quantum dots embedded into a GaAs matrix were investigated by means of x-ray diffuse scattering. The measurements were done with synchrotron radiation using different diffraction geometries. Data evaluation was based on comparison with simulated distributions of x-ray diffuse scattering. For the samples under consideration ((001) surface) there is no difference in dot extension along [110] and [-110] and no directional ordering. The measurements easily allow the determination of the average indium amount in the wetting layers. Data evaluation by simulation of x-ray diffuse scattering gives an increase of Incontent from the dot bottom to the dot top.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 794: Symposium T – Self-Organized Processes in Semiconductor Heteroepitaxy , 2003 , T6.6/N8.6/Z6.6
Copyright
Copyright © Materials Research Society 2004

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References

REFERENCES

1. Bimberg, D., Grundmann, M., and Ledentsov, N.N., Quantum Dot Heterostructures (Wiley, Chichester, NY, 1999)Google Scholar
2. Rosenauer, A., Transmission Electron Microscopy of Semiconductor Nanostructures: Analysis of Composition and Strain State, vo. 182 of Springer Tracts in Modern Physics (Springer, Berlin, Heidelberg, 2003)Google Scholar
3. Liu, N., Lyeo, H., Shih, C., Oshima, M., Mano, T., and Koguchi, N., Appl. Phys. Lett. 80, 4345 (2002).Google Scholar
4. Liu, N., Tersoff, J., Baklenov, O., Holmes, J. A. L., and Shih, C. K., Phys. Rev. Lett. 84, 334 (2000).Google Scholar
5. Lenz, A., Timm, R., Eisele, H., Hennig, C., Becker, S., Sellin, R., Pohl, U. W., Bimberg, D., and Dähne, M., Appl. Phys. Lett. 81, 5150 (2002).Google Scholar
6. Kegel, I., Metzger, T. H., Lorke, A., Peisl, J., Stangl, J., Bauer, G., Nordlund, K., Schoenfeld, W. V., and Petroff, P. M., Phys. Rev. B 63, 035318 (2001).Google Scholar
7. Zhang, K., Heyn, Ch., Hansen, W., Schmidt, Th., and Falta, J., Appl. Surf. Sci. 175–176, 606 (2001).Google Scholar
8. Darhuber, A. A., Holy, V., Stangl, J., Bauer, G., Krost, A., Heinrichsdorff, F., Grundmann, M., Bimberg, D., Usinov, V. M., Kop'ev, P. S., Kosogov, A. O., and Werner, P., Appl. Phys. Lett. 70, 955 (1997).Google Scholar
9. Hanke, M., Grigoriev, D., Schmidbauer, M., Schäfer, P., Köhler, R., Pohl, U.W., Sellin, R.L., Bimberg, D., Zakharov, N.D., and Werner, P., Physica E (2003), to be published.Google Scholar
10. Schmidbauer, M., Hanke, M. and Köhler, R., Cryst. Res. Techn. 37, 3 (2002).Google Scholar
11. Rosenauer, A., Gerthsen, D., Van Dyck, D., Arzberger, M., Böhm, G., and Abstreiter, G., Phys. Rev. B 64 (2001) 245334 Google Scholar
12. Grigoriev, D., Hanke, M., Schmidbauer, M., Schäfer, P., Konovalov, O., and Köhler, R., J. Phys. D 36, A225 (2003)Google Scholar