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Dielectric Property Controls Using Crystal Structure Anisotropy In Bismuth Layer-Structured Dielectrics

Published online by Cambridge University Press:  26 February 2011

Muneyasu Suzuki ,
Kenji Takahashi ,
Takayuki Watanabe ,
Tadashi Takenaka  and
Hiroshi Funakubo
Muneyasu Suzuki
Affiliation:
msuzuki@iem.titech.ac.jp, Tokyo Institute of Technology, Innovative and Engineered Materials, J2-43, 4259 Nagatsuda-cho, Yokohama-City, Kanagawa, 226-8502, Japan, +81-45-924-5446, +81-45-924-5398
Kenji Takahashi
Affiliation:
kentaka@iem.titech.ac.jp
Takayuki Watanabe
Affiliation:
t.watanabe@fz-juelich.de
Tadashi Takenaka
Affiliation:
tadashi@takenaka.ee.noda.tus.ac.jp
Hiroshi Funakubo
Affiliation:
funakubo@iem.titech.ac.jp
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Abstract

Temperature dependency of the dielectric property of c-axis-oriented SrBi4Ti4O15 films was investigated in a temperature range from 80 to 400 K. c-axis-oriented epitaxial films with the film thickness of 30 and 140 nm were grown on (100)cSrRuO3//(100)SrTiO3 substrates by metal organic chemical vapor deposition (MOCVD). Increasing lattice distortions along the a- and c-axes with decreasing film thickness was ascertained by XRD reciprocal space mapping. However, capacitance change normalized by the capacitance data at 300 K for with temperature was independent of the film thickness; it increased from 80 to 230 K and contrary decreased with increasing the temperature. Especially, the temperature coefficient of capacitance from 230 to 330 K was almost the same. It indicates that dielectric characteristics of these films for the temperature are independent of the film thickness in the actual use. Moreover, the same mesurement for the 120 nm-thick fiber-textured c-axis-oriented SrBi4Ti4O15 film deposited on the (100)cLaNiO3/(111)Pt/TiO2/SiO2/(100)Si substrate was also investigated. Resultant capacitance change with the temperature was basically the same with that of the epitaxial one, even though the temperature at maximum capacitance value was slightly shifted to lower temperature of 200 K. These data suggest that of capacitance change with the temperature was almost independent of the film thickness and the in-plane orientation.

Keywords

dielectricdielectric propertieselectrical properties
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 902: Symposium T – Ferroelectric Thin Films XIII , 2005 , 0902-T02-06
Copyright
Copyright © Materials Research Society 2006

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References

1 Hwang, C. S., Park, S. O., Kang, C. S., Cho, H., Kang, H., Ahn, S. T., Lee, M. Y., Jpn. J. Appl. Phys., 34, 5178 (1995).Google Scholar
2 Padmini, P., Taylor, T. R., Lefevre, M. J., Nagra, A. S., York, R. A., and Speck, J. S., Appl. Phys. Lett., 75, 3186 (1999).Google Scholar
3 Ezhilvalavan, S., and Tseng, T.-Y., Mater. Chem. Phys., 65, 227 (2000).Google Scholar
4 Sinnamon, L. J., Bowman, R. M, and Gregg, J. M., Appl. Phys. Lett., 78, 1724 (2001).Google Scholar
5 Kojima, T., Sakashita, Y., Watanabe, T., Kato, K., and Fuankubo, H., Mater. Res. Soc. Symp. Proc., 748, U15.2.1 (2003).Google Scholar
6 Araujo, C.A., Cuchiaro, J.D., Mcmilan, L.D., Scott, M.C. and Scott, J.F., Nature, 374, 627 (1995).Google Scholar
7 Takahashi, K., Suzuki, M., Oikawa, T., Kojima, T., Watanabe, T. and Funakubo, H., Chem. Vapor Depo., (in press).Google Scholar
8 Takahashi, K., Suzuki, M., Okamoto, S. and Funakubo, H., Cearm.Eng.Sci.Proc., (in press).Google Scholar
9 Sumi, A., Kim, Y. K., Oshima, N., Akiyama, K., Saito, K. and Funakubo, H., Appl. Phys. Lett., 87, 052112–1 (2005).Google Scholar
10 Okamoto, S., Yokoyama, S., Honda, Y., Asano, G. and Funakubo, H., Jpn. J. Appl. Phys., 43, 6567 (2004).Google Scholar