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Device And Fabrication Issues of High Performance Si/Sige Fets

Published online by Cambridge University Press:  10 February 2011

M. Arafa ,
I. Adesida  and
K. Ismail
M. Arafa
Affiliation:
Coordinated Science Laboratory and the Center of Compound Semiconductor Microelectronics. Department of Electrical and Computer Engineering, University of Illinois at Urbana-Champaign, Urbana, IL 61801, arafa@capone.ccsm.uiuc.edu.
I. Adesida
Affiliation:
Coordinated Science Laboratory and the Center of Compound Semiconductor Microelectronics. Department of Electrical and Computer Engineering, University of Illinois at Urbana-Champaign, Urbana, IL 61801, arafa@capone.ccsm.uiuc.edu.
K. Ismail
Affiliation:
IBM T. J. Watson Research Center, Yorktown Heights, NY 10598.
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Abstract

A review of the latest results on high performance Si/SiGe FETs grown on relaxed buffer is presented. A discussion of the fabrication issues facing the achievement of these devices is also included.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 533: Symposium FF – Epitaxy & Applications of Si-Based Heterostructures , 1998 , 83
Copyright
Copyright © Materials Research Society 1998

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References

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