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Published online by Cambridge University Press: 15 February 2011
The microstructure found at the surfaces and interfaces of active sensing materials can strongly affect the performance of solid state chemical sensors. This paper desribes research efforts aimed at improving oxide semiconductor-based gas sensors which utilize changes in conductance and diode current-voltage measurements as detection schemes. Studies of oxide surface modification and the formation of Pd/SnO2(110) and Pd/TiO2(110) interfaces are discussed as are the electrical changes for these systems induced by H2 or O2 adsorption. The fabrication of heteroepitaxial SnO2 films for use in planar sensing arrays is also reported and the expected advantages of these highly-ordered, uniform films for simplifying the transducing process are described.