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Determination of the Core-structure of Shockley Partial Dislocations in 4H-SiC

Published online by Cambridge University Press:  01 February 2011

Yi Chen ,
Ning Zhang ,
Xianrong Huang ,
Joshua D Caldwell ,
Kendrick X Liu ,
Robert E Stahlbush  and
Michael Dudley
Yi Chen
Affiliation:
yichen1@ic.sunysb.edu, Stony Brook University, Materials Science and Engineering, 314 Old Engineering, Stony Brook University, Stony Brook, NY, 11794-2275, United States
Ning Zhang
Affiliation:
nizhang@ic.sunysb.edu, Stony Brook University, Department of Materials Science and Engineering, Stony Brook, NY, 11794-2275, United States
Xianrong Huang
Affiliation:
xhuang@bnl.gov, Brookhaven National Laboratory, National Synchrotron Light Source II, Upton, NY, 11973-5000, United States
Joshua D Caldwell
Affiliation:
joshua.caldwell@nrl.navy.mil, Naval Research Laboratory, Washington, DC, 20375-5320, United States
Kendrick X Liu
Affiliation:
kendrick.liu@nrl.navy.mil, Naval Research Laboratory, Washington, DC, 20375-5320, United States
Robert E Stahlbush
Affiliation:
stahlbush@nrl.navy.mil, Naval Research Laboratory, Washington, DC, 20375-5320, United States
Michael Dudley
Affiliation:
mdudley@notes.cc.sunysb.edu, Stony Brook University, Department of Materials Science and Engineering, Stony Brook, NY, 11794-2275, United States
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Abstract

Synchrotron x-ray topographs taken using basal plane reflections indicate that the electron-hole recombination activated Shockley partial dislocations in 4H silicon carbide bipolar devices appear as either white stripes with dark contrast bands at both edges or dark lines. In situ electroluminescence observations indicated that the mobile partial dislocations correspond to the white stripes in synchrotron x-ray topographs, while immobile partial dislocations correspond to the dark lines. Computer simulation based on ray-tracing principle indicates that the contrast variation of the partial dislocations in x-ray topography is determined by the position of the extra atomic half planes associated with the partial dislocations lying along their Peierls valley directions. The chemical structure of the Shockley partial dislocations can be subsequently determined unambiguously and non-destructively.

Keywords

defectsdislocationsx-ray diffraction (XRD)
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1069: Symposium D – Silicon Carbide 2008—Materials, Processing and Devices , 2008 , 1069-D03-03
Copyright
Copyright © Materials Research Society 2008

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References

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