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Detection Limits of a nip a-Si:H Linear Array Position Sensitive Detector

Published online by Cambridge University Press:  21 March 2011

R. Martins ,
D. Costa ,
H. Águas ,
F. Soares ,
A. Marques ,
I. Ferreira ,
P. Borges  and
E. Fortunato
R. Martins
Affiliation:
Materials Science Department of, Faculty of Sciences and Technology of New University of Lisbon and CEMOP/UNINOVA, Campus da Caparica, 2829-516 Caparica, Portugal;
D. Costa
Affiliation:
Materials Science Department of, Faculty of Sciences and Technology of New University of Lisbon and CEMOP/UNINOVA, Campus da Caparica, 2829-516 Caparica, Portugal;
H. Águas
Affiliation:
Materials Science Department of, Faculty of Sciences and Technology of New University of Lisbon and CEMOP/UNINOVA, Campus da Caparica, 2829-516 Caparica, Portugal;
F. Soares
Affiliation:
Materials Science Department of, Faculty of Sciences and Technology of New University of Lisbon and CEMOP/UNINOVA, Campus da Caparica, 2829-516 Caparica, Portugal;
A. Marques
Affiliation:
Tekelec, Chão de Murches 2750 Cascais, Portugal
I. Ferreira
Affiliation:
Materials Science Department of, Faculty of Sciences and Technology of New University of Lisbon and CEMOP/UNINOVA, Campus da Caparica, 2829-516 Caparica, Portugal;
P. Borges
Affiliation:
Tekelec, Chão de Murches 2750 Cascais, Portugal
E. Fortunato
Affiliation:
Materials Science Department of, Faculty of Sciences and Technology of New University of Lisbon and CEMOP/UNINOVA, Campus da Caparica, 2829-516 Caparica, Portugal;
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Abstract

This paper presents results of the spatial and frequency detection limits of an integrated array of 32 one-dimensional amorphous silicon thin film position sensitive detectors with a nip structure, under continuous and pulsed laser operation conditions. The data obtained show that 0.45×0.06 cm arrays, occupying a total active area of about 1 cm2 have a spatial resolution better than 10 m m (modulation transfer function of about 0.2), with a cut-off frequency of about 6.8 KHz. Besides that, under pulsed laser conditions the device non-linearity has its minimum (about 1.6%), for a frequency of about 200Hz. Up to the limits of the cut-off frequency, the device nonlinearity increases to values above 4%.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 808: Symposium A – Amorphous and Nanocrystaline Silicon Science and Technology-2004 , 2004 , A4.45
Copyright
Copyright © Materials Research Society 2004

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References

REFERENCES

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