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Detailed Characterisations of GaAs Films on Si Obtained by Conformal Growth.

Published online by Cambridge University Press:  25 February 2011

B. Gerard ,
D. Pribat ,
R. Bisaro ,
E. Costard ,
J. Nagle ,
J. Ricciardi  and
M. Dupuy
B. Gerard
Affiliation:
THOMSON-CSF, Central labs, 91404 Orsay Cedex, France
D. Pribat
Affiliation:
THOMSON-CSF, Central labs, 91404 Orsay Cedex, France
R. Bisaro
Affiliation:
THOMSON-CSF, Central labs, 91404 Orsay Cedex, France
E. Costard
Affiliation:
THOMSON-CSF, Central labs, 91404 Orsay Cedex, France
J. Nagle
Affiliation:
THOMSON-CSF, Central labs, 91404 Orsay Cedex, France
J. Ricciardi
Affiliation:
THOMSON-CSF, Central labs, 91404 Orsay Cedex, France
M. Dupuy
Affiliation:
LETVCPM, Bp 85 X, 38041 Grenoble Cedex, France.
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Abstract

Conformal growth is a confined epitaxial lateral overgrowth technique capable of yielding low dislocation density GaAs films on Si. This technique makes extensive use of selective epitaxy and crystal growth is confined by a dielectric cap as well as by the self-passivated Si surface itself.

In this paper, we have performed a detailed characterisation of the state of stress of the GaAs films in various configurations (after conformal growth and removal of the seed regions, and after the regrowth of an MBE layer) by photoluminescence measurements at 5K and X-ray diffraction experiments. Although the as-grown conformal films are found in the same state of stress than reference MOCVD GaAs epilayers on Si, we report a significant decrease of this stress after MBE regrowth on conformal films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 280: Symposium B – Evolution of Surface and Thin Film Microstructure , 1992 , 675
Copyright
Copyright © Materials Research Society 1993

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References

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