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The Design of Multilayered Polysilicon for MOEMS Applications

Published online by Cambridge University Press:  21 March 2011

D. Sherman
Affiliation:
Department of Materials Science and Engineering Dept. of Materials Engineering, Technion, Haifa 32000, Israel
H. Kahn
Affiliation:
Department of Materials Science and Engineering
S.M. Phillips
Affiliation:
Department of Electrical Engineering and Computer Science
R. Ballarini
Affiliation:
Department of Civil Engineering, Case Western Reserve University, Cleveland, Ohio 44106 USA
A.H. Heuer
Affiliation:
Department of Materials Science and Engineering
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Abstract

A rigorous analysis of a multilayered polysilicon laminated system, constructed by alternating deposition of low-pressure chemical vapor deposition (LPCVD) polysilicon at two different temperatures is presented. Different residual deformation fields are generated in these polysilicon thin films as a function of fabrication temperatures, due to different crystallization behavior at the two temperatures. The combination of the two layers, however, enables precise control of the radius of curvature of released structures, provided the material properties are well defined. We describe a new method, which combines experimental and numerical procedures, to define the material properties, which are responsible for the residual stresses as a function of layer thickness, as well as a procedure to design the desired curvature of a multilayered Micro-optical-electromechanical system (MOEMS) device. A linear deformation field is assumed. It is shown that precise design of the thicknesses of the individual layer is a prerequisite for controlled curvature. The procedure we have developed predicts the curvature of multilayered polysilicon systems with good precision.

Type
Research Article
Copyright
Copyright © Materials Research Society 2002

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References

REFERENCES

1. Yang, J., Kahn, H., He, A.Q., Phillips, S.M., and Heuer, A.H., Journal of Microelectromechanical Systems, Dec 2000 Google Scholar
2. Joubert, P., Loisel, B., Chouan, Y., and Haji, L., J. Electrochem. Soc., vol. 134, pp. 25412544, 1987 Google Scholar
3. Kamins, T.I., Sensors and Actuators, vol A21–A23, pp. 817824, 1990 Google Scholar
4. Guckel, H., Sniegowski, J.J., Christenson, T.R., and Raissi, F., Sensors and Actuators, vol. A21–A23, pp. 346351, 1990 Google Scholar
5. Krulevitch, P., Howe, R.T., Johnson, G.C., and Huang, J., in Proc. IEEE Int. Conf. on Solid-State Sensors and Actuators, Transducers 91. (San Francisco, CA, June 24-27, 1991, pp. 949952).Google Scholar
6. Oei, D.-G. and McCarthy, S.L., in MRS Symposium Proc., vol. 276. (San Francisco, CA, April 2830, 1992, pp. 85-90).Google Scholar
7. Kakinuma, H., J. Vac. Sci. Technol. A, vol. 13, pp. 23102317, 1995 Google Scholar
8. Yu, C.-L., Flinn, P.A., Lee, S.-H., and Bravman, J.C., in MRS Symposium Proc., vol. 441. (Boston, MA, December 2-6, 1996, pp. 403408).Google Scholar
9. Johnson, G.C. and Krulevitch, P., in Proc. ASME Winter Annual Mtg, Micromechanical Systems, DSC-vol. 46. (New Orleans, LA, November 28-December 3, 1993, pp. 8995).Google Scholar
10. Sherman, D. and Schlumm, D., J. Mat. Res., 16 (2001) 753764.Google Scholar
11. Ni, A., Sherman, D., Kahn, H., Ballarini, R., and Heuer, A.H., In Progress.Google Scholar