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Deposition Profile Simulation: Topological Effects

Published online by Cambridge University Press:  15 February 2011

Yun Biao Wang  and
Francis Teyssandier
Yun Biao Wang
Affiliation:
Institut de Science et de Génie des Matériaux et Procédés, CNRS-UPR8521, Université, Avenue de Villeneuve, F-66860 Perpignan Cedex, France.
Francis Teyssandier
Affiliation:
Institut de Science et de Génie des Matériaux et Procédés, CNRS-UPR8521, Université, Avenue de Villeneuve, F-66860 Perpignan Cedex, France.
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Abstract

There is a considerable amount of evidence for the dependence of microstructure and surface morphology of films obtained by conventional thermally activated chemical vapor deposition on mass transport phenomena. This paper addresses the simulation of the influence of conveclive-diffusivc transport phenomena as well as homogeneous reactions on the deposition profile of silicon films in the case of some characteristic topological effects. For that purpose, the Si-H chemical system including both homogeneous and heterogeneous reactions is used. The evolution of the deposition profile during vapor growth is simulated for various surface defects such as a step or a trench. The influence of basic processing parameters such as temperature or flowrate is discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 389: Symposium R – Modedling and Simulation of Thin-Film Processing , 1995 , 119
Copyright
Copyright © Materials Research Society 1997

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References

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