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Deposition of GaN Films on Glass Substrate and Its Application to UV Electroluminescent Devices

Published online by Cambridge University Press:  11 February 2011

Tohru Honda ,
Kenichi Iga ,
Hideo Kawanishi ,
Takahiro Sakaguchi  and
Fumio Koyama
Tohru Honda
Affiliation:
Department of Electronic Engineering, Kohgakuin University, 2665–1 Nakano-machi, Hachiohji, Tokyo 192–0015, JAPAN
Kenichi Iga
Affiliation:
Department of Electronic Engineering, Kohgakuin University, 2665–1 Nakano-machi, Hachiohji, Tokyo 192–0015, JAPAN
Hideo Kawanishi
Affiliation:
Department of Electronic Engineering, Kohgakuin University, 2665–1 Nakano-machi, Hachiohji, Tokyo 192–0015, JAPAN
Takahiro Sakaguchi
Affiliation:
P&I Lab., Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226–8503, JAPAN
Fumio Koyama
Affiliation:
P&I Lab., Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226–8503, JAPAN
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Abstract

GaN films were deposited on glass substrates using a compound-source molecular beam epitaxy technique. Electroluminescent devices with a double-insulator structure were also fabricated using the deposited films. When the devices were operated using a sine-wave voltage, one of the emission peaks was located in the UV spectral region. Introducing a small ammonia flow increased the deposition rate.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 743: Symposium L – GaN and Related Alloys , 2002 , L6.31
Copyright
Copyright © Materials Research Society 2003

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References

REFERENCES

[1] Honda, T., Maki, K. and Kawanishi, H., IPAP Conf. Series 1, 644 (2000).Google Scholar
[2] Yagi, S., Jpn. J. Appl. Phys. 38, L792 (1999).Google Scholar
[3] Tampo, H., Asahi, H., Hiroki, M., Imanishi, Y., Asami, K. and Gonda, S., J. Cryst. Growth 189/190, 218 (1998).Google Scholar
[4] Honda, T., Sato, K., Hashimoto, T., Shinohara, M. and Kawanishi, H., Phys. Stat. Sol. 188, 587 (2001).Google Scholar
[5] Kurai, S., Naoi, Y., Abe, T., Ohmi, S. and Sakai, S., Jpn. J. Appl. Phys. 35, L77 (1996).Google Scholar
[6] Nishino, K. and Sakai, S., Gallium Nitride and Related Semiconductors, eds. Edgar, J. H., Stride, S., Akasaki, I., Amano, H. and Wetzel, C., INSPEC, London 1999 (p 367).Google Scholar
[7] Honda, T., Inao, Y., Konno, K., Mineo, K., Kumabe, S. and Kawanishi, H., Phys. Stat. Sol., in press.Google Scholar
[8] Kamp, M., Mayer, M.. Pelezmann, A. and Ebeling, K. J., Mat. Res. Soc. Symp. Proc. 449, 191 (1997).Google Scholar
[9] Harrison, W. A., Electronic Structure and The Properties of Solids (Dover, New York, 1989) p. 66.Google Scholar
[10] Koukitu, A. and Seki, H., Jpn. J. Appl. Phys. 36, L750 (1997).Google Scholar