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Dependence of Crystallographic Texture of C54 Tisi2 on Thickness and Linewidth In Submicron Cmos Structures

Published online by Cambridge University Press:  15 February 2011

V. Svilan ,
K. P. Rodbell ,
L. A. Clevenger ,
C. Cabral Jr ,
R. A. Roy ,
C. Lavoie ,
J. Jordan-Sweet  and
J. M. E. Harper
V. Svilan
Affiliation:
IBM T.J. Watson Research Center, Yorktown Heights, NY 10598
K. P. Rodbell
Affiliation:
IBM T.J. Watson Research Center, Yorktown Heights, NY 10598
L. A. Clevenger
Affiliation:
IBM T.J. Watson Research Center, Yorktown Heights, NY 10598
C. Cabral Jr
Affiliation:
IBM T.J. Watson Research Center, Yorktown Heights, NY 10598
R. A. Roy
Affiliation:
IBM T.J. Watson Research Center, Yorktown Heights, NY 10598
C. Lavoie
Affiliation:
IBM T.J. Watson Research Center, Yorktown Heights, NY 10598
J. Jordan-Sweet
Affiliation:
IBM T.J. Watson Research Center, Yorktown Heights, NY 10598
J. M. E. Harper
Affiliation:
IBM T.J. Watson Research Center, Yorktown Heights, NY 10598
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Abstract

Preferential crystal orientation of low-resistance C54 TiSi2 formed in the reaction of polycrystalline and single crystal silicon with titanium was investigated for Ti thicknesses ranging from 15 to 44 nm. Using in situ synchrotron x-ray diffraction during heating of 15 nm of Ti on single crystal Si, we observed that the C54 TiSi2 silicide film showed predominantly <040> grains oriented normal to the sample. In thicker silicide films the <311> orientation dominated or film was randomly oriented. An ex situ four circle diffractometer was used to investigate the strong <040> texture in narrow line arrays of C54-TiSi2 formed on polycrystalline silicon with linewidths from 0.2 to 1.1 μm. We observed that the angular distribution of <040> Ti Si2 grains is dependent on the line direction, where the majority of grains had their (100) planes oriented parallel with the line direction. These findings support a model of the C49 to C54 TiSi2 transformation involving rapid growth of certain orientations favored by the one-dimensional geometry imposed by narrow lines.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 427: Symposium K – Advanced Metallization for Future ULSI , 1996 , 53
Copyright
Copyright © Materials Research Society 1996

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