Hostname: page-component-848d4c4894-cjp7w Total loading time: 0 Render date: 2024-07-07T22:46:35.893Z Has data issue: false hasContentIssue false
  • English
  • Français

Density Measurements of Ion Implanted Amorphous Silicon

Published online by Cambridge University Press:  25 February 2011

J. S. Custer ,
Michael O. Thompson ,
D. C. Jacobson ,
J. M. Poate ,
S. Roorda ,
W. C. Sinke  and
F. Spaepen
J. S. Custer
Affiliation:
Dept. of Materials Science and Engineering, Cornell University, Ithaca, NY 14853
Michael O. Thompson
Affiliation:
Dept. of Materials Science and Engineering, Cornell University, Ithaca, NY 14853
D. C. Jacobson
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
J. M. Poate
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
S. Roorda
Affiliation:
FOM-Institute for Atomic and Molecular Physics, 1098 SJ Amsterdam, The Netherlands
W. C. Sinke
Affiliation:
FOM-Institute for Atomic and Molecular Physics, 1098 SJ Amsterdam, The Netherlands
F. Spaepen
Affiliation:
Division of Applied Sciences, Harvard University, Cambridge, MA 02138
Get access

Abstract

The density of amorphous Si was measured. Continuous and buried amorphous Si films were produced by 0.5-8 MeV Si implantation through a steel contact mask. Surface steps of amorphous Si stripes with initial thicknesses from 0.9 to ∼ 5.0 μm were measured using a surface profilometer. For implants up to 5 MeV, the amorphous Si is constrained laterally by the surrounding crystal and deforms plastically. The density of amorphous Si deduced from the surface step heights is 4.91 × 1022 cm-3, 1.7 ± 0.1 % less than the density of crystal Si (5.00 × 1022 cm-3).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 157: Symposium A – Beam-Solid Interactions: Physical Phenomena , 1989 , 689
Copyright
Copyright © Materials Research Society 1990

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1 Moss, S. C. and Graczyk, J. F., Phys. Rev. Lett. 23, 1167 (1969).Google Scholar
2 Brodsky, M. H., Kaplaz, D., and Ziegler, J. F., Appl. Phys. Lett. 21, 305 (1972).Google Scholar
3 Spitzer, W. G., Hubler, G. K., and Kennedy, T. A., Nucl. Instr. and Meth. 209/210, 309 (1983).Google Scholar
4 Wooten, F. and Weaire, D., Solid State Physics 40, 1 (1987).Google Scholar
5 Luedtke, W. D. and Landman, Uzi, Phys. Rev. B 40, 1164 (1989).Google Scholar
6 Roorda, S., Poate, J. M., Jacobson, D. C., Eaglesham, D. J., Dennis, B. S., Dierker, S., Sinke, W. C., and Spaepen, F., these proceedings.Google Scholar
7 Ziegler, J. F., He Stopping Powers and Ranges in all Elemental Matter (Pergamon, New York, 1978).Google Scholar
8 Volkert, C. A., these proceedings. Wafer curvature measurements show that the amount of curvature is very small compared with that required for elastic accommodation of the strain. Google Scholar