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Degradation Mechanism of GaN-based LEDs With Different Growth Parameters

Published online by Cambridge University Press:  31 January 2011

Leung Ka Kuen ,
W.K. Patrick Fong ,
Paddy Kwok Leung Chan  and
Charles Surya
Leung Ka Kuen
Affiliation:
kelvin42tmhk@yahoo.com.hk05900144r@polyu.edu.hk, The Hong Kong Polytechnic University, EIE, Hong Kong, Hong Kong
W.K. Patrick Fong
Affiliation:
Patrick.Fong@inet.polyu.edu.hk, The Hong Kong Polytechnic University, EIE, Hong Kong, Hong Kong
Paddy Kwok Leung Chan
Affiliation:
mmklchan@polyu.edu.hk, The Hong Kong Polytechnic University, ME, Hong Kong, Hong Kong
Charles Surya
Affiliation:
kelvin42tmhk@yahoo.com.hk05900144r@polyu.edu.hk, The Hong Kong Polytechnic University, EIE, Hong Kong, Hong Kong
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Abstract

We investigated the degradation mechanism of GaN LEDs due to the application of a high d.c. stressing current. To identify the underlying process for device failure we examined the effects of the InGaN quantum well growth parameters on the hot-electron hardness of the devices. Systematic characterizations on the degradations in the microstructural, thermoreflectance, and low frequency noise properties of the devices were performed.

Keywords

chemical vapor deposition (CVD) (deposition)optoelectronicIII-V
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1195: Symposium B – Rellliability and Materials Issues of Semiconductor Optical and Electrical Devices and Materials , 2009 , 1195-B08-06
Copyright
Copyright © Materials Research Society 2010

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