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Defects in Superlattices Under Pressure
Published online by Cambridge University Press: 26 February 2011
Abstract
We report theoretical calculations of deep levels in GaAs/AlxGa1−xAs superlattices under hydrostatic pressure. We predict phase diagrams for DX centers: for a given composition x there is a function p(a), which relates pressure p and GaAs quantum-well width a, and defines a phase boundary between two regions: one in which DX is a deep trap in the fundamental band gap and another in which the DX deep level lies in the conduction band.
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- Copyright © Materials Research Society 1987
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