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Defects in 4H-SiC Induced by High Energy Helium Implantation

Published online by Cambridge University Press:  21 March 2011

Marie F. Beaufort ,
Erwan Oliviero ,
Marie L. David ,
Alain Declémy ,
Christian Blanchard ,
Esidor Ntsoenzok  and
Jean F. Barbot
Marie F. Beaufort
Affiliation:
Laboratoire de Métallurgie Physique UMR6630, BP30179, 86960Chasseneuil-Futuroscope, France
Erwan Oliviero
Affiliation:
Laboratoire de Métallurgie Physique UMR6630, BP30179, 86960Chasseneuil-Futuroscope, France
Marie L. David
Affiliation:
Laboratoire de Métallurgie Physique UMR6630, BP30179, 86960Chasseneuil-Futuroscope, France
Alain Declémy
Affiliation:
Laboratoire de Métallurgie Physique UMR6630, BP30179, 86960Chasseneuil-Futuroscope, France
Christian Blanchard
Affiliation:
Laboratoire de Métallurgie Physique UMR6630, BP30179, 86960Chasseneuil-Futuroscope, France
Esidor Ntsoenzok
Affiliation:
CNRS-CERI, 4A rue de la Férollerie, Orléans
Jean F. Barbot
Affiliation:
Laboratoire de Métallurgie Physique UMR6630, BP30179, 86960Chasseneuil-Futuroscope, France
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Abstract

1.6 MeV He+ ions were implanted at room temperature into (0001) 4H-SiC at a dose of 1×1017 cm−2 and then annealed at 1500°C for 30 min. Small bubbles are readily observed in the as-implanted sample but also an amorphous layer. After a 1500°C annealing, recrystallization of the amorphous state occurs and large bubbles or cavities are observed. However their shape strongly depends of their location inside the buried layer. The recrystallization consists of polytypisme, 4H-SiC growth along the c-direction from the substrate, columnar 4H-SiC and epitaxial growth of 3C-SiC.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 680: Symposium E – Wide Bandgap Electronics , 2001 , E9.19
Copyright
Copyright © Materials Research Society 2001

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References

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