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Defect States In p-ZnSe:N Grown By MOVPE

Published online by Cambridge University Press:  15 February 2011

Shizuo Fujita ,
Ken-Ichi Ogata ,
Daisuke Kawaguchi ,
Zhi Gang Peng  and
Shigeo Fujita
Shizuo Fujita
Affiliation:
Department of Electronic Science and Engineering, Kyoto University, Kyoto 606-01, Japan
Ken-Ichi Ogata
Affiliation:
Department of Electronic Science and Engineering, Kyoto University, Kyoto 606-01, Japan
Daisuke Kawaguchi
Affiliation:
Department of Electronic Science and Engineering, Kyoto University, Kyoto 606-01, Japan
Zhi Gang Peng
Affiliation:
Department of Electronic Science and Engineering, Kyoto University, Kyoto 606-01, Japan
Shigeo Fujita
Affiliation:
Department of Electronic Science and Engineering, Kyoto University, Kyoto 606-01, Japan
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Abstract

Concentration and origin of defect states in p-type nitrogen-doped ZnSe (p-ZnSe:N) grown by metalorganic vapor-phase epitaxy (MOVPE) are discussed by means of timeresolved photoluminescence and deep level transient spectroscopy. Thermal annealing, which is a useful tool for realizing p-type conductivity, results in deep defect states which seem to be associated with Zn vacancies and with nitrogen acceptors. By lowering the annealing temperature, the trap concentrations can be successfully reduced without seriously sacrificing the acceptor activation efficiency, although further reduction of Zn vacancies is pointed out as a remaining requirement for the improvement of quality of MOVPE-grown p-type layers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 442: Symposium E – Defects in Electronic Materials II , 1996 , 561
Copyright
Copyright © Materials Research Society 1997

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