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A Defect Map for Degradation of Ingaasp/Inp Long Wavelength Laser Diodes

Published online by Cambridge University Press:  10 February 2011

S.N.G. Chu  and
S. Nakahara
S.N.G. Chu
Affiliation:
AT&T Bell Laboratories, 600 Mountain Ave., Murray Hill, NJ 07974
S. Nakahara
Affiliation:
Breinigsville, PA 18031
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Abstract

We summarize the characteristic defect structures associated with gradual-degradation, rapiddegradation, catastrophic (mirror-facet) optical damage (COD), electric static discharge (ESD) and electric overstress (EOS) damages to provide a defect-map for device failure mode analysis. The generation mechanisms of these lattice defects are discussed which pinpoint the weak links in the device structures.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 421: Symposium D – Compound Semiconductor Electronics and Photonics , 1996 , 407
Copyright
Copyright © Materials Research Society 1996

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References

1. Chu, S.N.G., Nakahara, S., Twigg, M.E., Koszi, L.A., Flynn, E.J., Chin, A.K., Segner, B.P., and Johnston, W.D. Jr.,, J.Appl.Phys., 63, 611(1988).Google Scholar
2. Chu, S.N.G. and Nakahara, S., Appl.Phys.Lett., 56, 434(1990).Google Scholar
3. Chu, S.N.G., MRS Bulletin, Vol. XVIII, No 12, 43, December (1993).Google Scholar
4. Chu, S.N.G. and Nakahara, S., Appl. Phys. Lett., 62, 917, (1993).Google Scholar
5. Chu, S.N.G., Logan, R.A., Temkin, H., J.Appl.Phys., 61, 2434(1987).Google Scholar
6. Chu, S.N.G., Mat.Res.Soc.Symp.Proc.Vol. 184, 135(1990).Google Scholar
7. Chu, S.N.G., Nakahara, S., Luther, L.C. and Krautter, H.W., J.Appl.Phys., 69,6974(1991)Google Scholar
8. Ucda, O., Mat.Res. Soc. Symp.Proc.Vol. 184, 125(1990).Google Scholar
9. Ueda, O., J.Electrochem.Soc., 135, 11C(1988).Google Scholar
10. Fukuda, M., “Reliability and Degradation of Semiconductor Lasers and LEDs”,Artech House, Boston, 1991,Google Scholar
11. Gangert, U., Briggs, A.T., Goodwin, A.R., and Charsley, P., Inst. Phys. Conf. Ser. 117, 581 (1991).Google Scholar
12. deCooman, B.C., Bulle-Lieuwma, C.W.T., dePoorter, J.A., and Nijman, W., J.Appl.Phys. 67, 3919(1990).Google Scholar
13. Ueda, O., Wakao, K., Kanija, S., Yamaguchi, A., Isozumi, S., and Umebu, I., J.Appl.Phys. 58, 3996(1985).Google Scholar
14. Henry, C.H., Petroff, P.M., Logan, R.A., and Merrit, F.M., J.Appl.Phys. 50, 3721(1979).Google Scholar
15. Jakubowicz, A., Oosenbrug, A., and Forster, Th., Appl. Phys. Lett. 63, 1185 (1993).Google Scholar
16. Dietzel, A., Jakubowicz, A., and Broom, R.F., Inst. Phys. Conf. Ser. No 146, 583(1995)Google Scholar
17. Hull, R., Bahnck, D., Stevie, F.A., Koszi, L.A., and Chu, S.N.G., Appl. Phys. Lett. 62, 3408(1993).Google Scholar
18. Twu, Y., Cheng, L.S., Chu, S.N.G., Nash, F.R., Wang, K.W., and Parayanthal, P., J.Appl.Phys. 74, 1510(1993).Google Scholar
19. Chu, S.N.G., Lucent Technologies, Bell Laboratories, to be published.Google Scholar