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Defect Formation in CW CO2 Laser Annealed Silicon

Published online by Cambridge University Press:  15 February 2011

H. Baumgart ,
F. Phillipp  and
H. J. Leamy
H. Baumgart
Affiliation:
Bell Laboratories, Murray Hill, New Jersey, 7974, USA
F. Phillipp
Affiliation:
Bell Laboratories, Murray Hill, New Jersey, 7974, USA Max Planck Institut fur Metallforschung, Heisenbergstr. 1, D–7000 Stuttgart, 80, Germany
H. J. Leamy
Affiliation:
Bell Laboratories, Murray Hill, New Jersey, 7974, USA
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Abstract

The EBIC mode of the SEM has been used to investigate the perfection of cw CO2 laser annealed Si. Even in material that contains no slip lines, non-uniform charge collection is found. A combined X-ray and electron microscopy (TEM, SEM) study identified the residual defects responsible for the EBIC contrast as interstitial submicron dislocation loops. Scanning cw laser annealing independent of the wavelength (10.6μm or 0.514μm) always introduces residual defects which act as recombination centers and reduce minority carrier lifetime.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 4: Symposium A – Laser and Electron-Beam Interactions with Solids , 1981 , 355
Copyright
Copyright © Materials Research Society 1982

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References

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