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Defect Formation During Sublimation Bulk Crystal Growth of Silicon Carbide

Published online by Cambridge University Press:  10 February 2011

Noboru Ohtani ,
Jun Takahashi ,
Masakazu Katsuno ,
Hirokatsu Yashiro  and
Masatoshi Kanaya
Noboru Ohtani
Affiliation:
Advanced Technology Research Laboratories, Nippon Steel Corporation, 5-10-1 Fuchinobe, Sagamihara, 229-8551Japan
Jun Takahashi
Affiliation:
Advanced Technology Research Laboratories, Nippon Steel Corporation, 5-10-1 Fuchinobe, Sagamihara, 229-8551Japan
Masakazu Katsuno
Affiliation:
Advanced Technology Research Laboratories, Nippon Steel Corporation, 5-10-1 Fuchinobe, Sagamihara, 229-8551Japan
Hirokatsu Yashiro
Affiliation:
Advanced Technology Research Laboratories, Nippon Steel Corporation, 5-10-1 Fuchinobe, Sagamihara, 229-8551Japan
Masatoshi Kanaya
Affiliation:
Advanced Technology Research Laboratories, Nippon Steel Corporation, 5-10-1 Fuchinobe, Sagamihara, 229-8551Japan
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Abstract

The defect formation during sublimation bulk crystal growth of silicon carbide (SiC) is discussed. SiC bulk crystals are produced by seeded sublimation growth (modified-Lely method), where SiC source powder sublimes and is recrystallized on a slightly cooled seed crystal at uncommonly high temperatures (≥2000°C). The crystals contain structural defects such as micropipes (hollow core dislocations), subgrain boundaries, stacking faults and glide dislocations in the basal plane. The type and density of the defects largely depend on the crystal growth direction, and many aspects are different between the growth parallel and perpendicular to the <0001> c-axis. Micropipes are characteristic defects to the c-axis growth, while a large number of stacking faults are introduced during growth perpendicular to the c-axis. We discuss the cause and mechanism of the defect formation

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 510: Symposium D – Defect & Impurity Engineered Semiconductors & Devices II , January 1998 , 37
Copyright
Copyright © Materials Research Society 1998

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