Hostname: page-component-848d4c4894-sjtt6 Total loading time: 0 Render date: 2024-06-25T12:28:45.856Z Has data issue: false hasContentIssue false
  • English
  • Français

Defect Evolution During Laser Annealing

Published online by Cambridge University Press:  01 February 2011

Susan B. Felch ,
Abhilash Mayur ,
Vijay Parihar ,
Faran Nouri ,
Kevin S. Jones ,
Daniel E. Zeenberg  and
Britta E. Jones
Susan B. Felch
Affiliation:
susan_felch@amat.com, Applied Materials, Front End Products Group, 974 E. Arques Avenue, M/S 81280, Sunnyvale, CA, 94085, United States, 408-584-1273, 408-584-1194
Abhilash Mayur
Affiliation:
abhilash_mayur@amat.com, Applied Materials, Front End Products Group, 974 E. Arques Avenue, Sunnyvale, CA, 94085, United States
Vijay Parihar
Affiliation:
vijay_parihar@amat.com, Applied Materials, Front End Products Group, 974 E. Arques Avenue, Sunnyvale, CA, 94085, United States
Faran Nouri
Affiliation:
faran_nouri@amat.com, Applied Materials, Front End Products Group, 974 E. Arques Avenue, Sunnyvale, CA, 94085, United States
Kevin S. Jones
Affiliation:
kjones@eng.ufl.edu, University of Florida, Dept. of Materials Science, Gainesville, FL, 32611, United States
Daniel E. Zeenberg
Affiliation:
dzgator@ufl.edu, University of Florida, Dept. of Materials Science, Gainesville, FL, 32611, United States
Britta E. Jones
Affiliation:
brittae@ufl.edu, University of Florida, Dept. of Materials Science, Gainesville, FL, 32611, United States
Get access

Abstract

Implementation of millisecond annealing requires the identification of the operating conditions for that technique which minimize the residual defects. In addition, possible combinations of low temperature annealing with millisecond annealing could result in minimal residual defects. The samples studied here were implanted with Ge+ pre-amorphization and boron dopant ions and were activated with a scanning laser annealing technique with maximum temperature dwell times of about one millisecond. The laser anneal conditions were varied, along with combinations of spike anneals. The annealed samples were analyzed by plan-view transmission electron microscopy (TEM) to measure the residual defect density and size. The effects of spike temperature, laser annealing temperature, and scan rate will be discussed.

Keywords

laser annealingdefectstransmission electron microscopy (TEM)
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 912: Symposium C – Doping Engineering for Device Fabrication , 2006 , 0912-C04-03
Copyright
Copyright © Materials Research Society 2006

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 The International Technology Roadmap for Semiconductors, 2005.Google Scholar
2 Noda, T., Felch, S., Parihar, V., Vrancken, C., Janssens, T., and Vandervorst, W., submitted to These Proceedings.Google Scholar
3 Zeenberg, D. and Jones, K., submitted to These Proceedings.Google Scholar
4 Ostwald, W., Z. Phys. Chem., Stoechiom. Verwandtschaftsl. 34, 495 (1900).Google Scholar
5 Burton, B. and Speight, M. V., Philos. Mag. A 53, 385 (1986).Google Scholar
6 Jain, A., Mat. Res. Soc. Symp. Proc., Vol. 810, p. 229 (2004).Google Scholar
7 Felch, S.B., Graoui, H. and Mayur, A., Proc. of Intl. Symp. On Advanced Short-Time Thermal Processing for Si-Based CMOS Devices II, Electrochemical Society, Vol. 2004–01, p. 31.Google Scholar
8 Falepin, A., Janssens, T., Severi, S., Vandervorst, W., Felch, S.B., Parihar, V., and Mayur, A., Proc. of 2005 RTP Conference, IEEE.Google Scholar
9 Jacques, J. M., presentation at Spring 2004 Materials Research Society symposium.Google Scholar